CORC

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CORC

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Strong interfacial coupling effects of ferroelectric polarization with two-dimensional electron gas in BaTiO3/MgO/AlGaN/GaN/Si heterostructures 期刊论文
JOURNAL OF MATERIALS CHEMISTRY C, 2019, 卷号: 7, 期号: 19, 页码: 5677
作者:  Li, Guanjie;  Li, Xiaomin;  Zhao, Junliang;  Zhu, Qiuxiang;  Chen, Yongbo
收藏  |  浏览/下载：42/0  |  提交时间：2019/12/26
Thermal stability of F ion-implant isolated AlGaN/GaN heterostructures 期刊论文
SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY, 2018
作者:  Deng, Xuguang(邓旭光);  Tan, Shuxin;  Zhang, Boshun(张宝顺);  Zhang, Jicai(张纪才)
收藏  |  浏览/下载：21/0  |  提交时间：2019/03/27
Large "near junction" thermal resistance reduction in electronics by interface nanoengineering 期刊论文
INTERNATIONAL JOURNAL OF HEAT AND MASS TRANSFER, 2011, 卷号: 54, 期号: 25-26, 页码: 5183-5191
作者:  Hu, Ming;  Zhang, Xiaoliang;  Poulikakos, Dimos;  Grigoropoulos, Costas P.
收藏  |  浏览/下载：30/0  |  提交时间：2015/12/18
Growth of 2 mu m crack-free gan on si(111) substrates by metal organic chemical vapor deposition 期刊论文
Chinese physics letters, 2011, 卷号: 28, 期号: 4, 页码: 4
作者:  Wei Meng;  Wang Xiao-Liang;  Xiao Hong-Ling;  Wang Cui-Mei;  Pan Xu
收藏  |  浏览/下载：30/0  |  提交时间：2019/05/12
Growth of 2 mu m Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition 期刊论文
chinese physics letters, 2011, 卷号: 28, 期号: 4, 页码: article no.48102
作者:  Pan X;  Hou QF
收藏  |  浏览/下载：83/7  |  提交时间：2011/07/05
Characterization of different-Al-content AlGaN/GaN heterostructures on sapphire 期刊论文
SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY, 2010, 卷号: 53, 期号: 1, 页码: 49
Ding, GJ; Guo, LW; Xing, ZG; Chen, Y; Xu, PQ; Jia, HQ; Zhou, JM; Chen, H
收藏  |  浏览/下载：19/0  |  提交时间：2013/09/17
Growth and character stics of AlGaN/GaN HEMT structures with AlN/GaN superlattices as barrier layers 期刊论文
ACTA PHYSICA SINICA, 2010, 卷号: 59, 期号: 8, 页码: 5724
Ding, GJ; Guo, LW; Xing, ZG; Chen, Y; Xu, PQ; Jia, HQ; Zhou, JM; Chen, H
收藏  |  浏览/下载：23/0  |  提交时间：2013/09/17
Broadening of the energy spectrum of ions accelerated by laser-driven shocks in over-dense slab plasmas 期刊论文
SIXTH INTERNATIONAL CONFERENCE ON INERTIAL FUSION SCIENCES AND APPLICATIONS, PARTS 1-4, 2010, 卷号: 244
Dong, QL; He, MQ; Sheng, ZM; Chen, M; Wang, SJ; Zhang, J
收藏  |  浏览/下载：14/0  |  提交时间：2013/09/17
Properties of AlyGa1-yN/AlxGa1-xN/AlN/GaN Double-Barrier High Electron Mobility Transistor Structure 期刊论文
chinese physics letters, 2009, 卷号: 26, 期号: 1, 页码: art. no. 017301
Guo LC; Wang XL; Xiao HL; Ran JX; Wang CM; Ma ZY; Luo WJ; Wang ZG
收藏  |  浏览/下载：193/43  |  提交时间：2010/03/08
Properties of alyga1-yn/alxga1-xn/aln/gan double-barrier high electron mobility transistor structure 期刊论文
Chinese physics letters, 2009, 卷号: 26, 期号: 1, 页码: 4
作者:  Guo Lun-Chun;  Wang Xiao-Liang;  Xiao Hong-Ling;  Ran Jun-Xue;  Wang Cui-Mei
收藏  |  浏览/下载：20/0  |  提交时间：2019/05/12

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