Growth and character stics of AlGaN/GaN HEMT structures with AlN/GaN superlattices as barrier layers

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	Growth and character stics of AlGaN/GaN HEMT structures with AlN/GaN superlattices as barrier layers
	Ding, GJ ; Guo, LW ; Xing, ZG ; Chen, Y ; Xu, PQ ; Jia, HQ ; Zhou, JM ; Chen, H
刊名	ACTA PHYSICA SINICA
	2010
卷号	59 期号:8 页码:5724
关键词	2-DIMENSIONAL ELECTRON GASES MOLECULAR-BEAM EPITAXY CHEMICAL-VAPOR-DEPOSITION PIEZOELECTRIC POLARIZATION ALN/ALGAN SUPERLATTICES GA-FACE HETEROSTRUCTURES MOBILITY SAPPHIRE CHARGES
ISSN号	1000-3290
通讯作者	Ding, GJ: Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China.
中文摘要	We report the growth and characterization of AlGaN/GaN heterostructures with AlN/GaN superlattices as the barrier layer. It is found that the surface morphology of the heterostructure is greatly improved compared with those using the conventional alloy AlGaN barrier layer. Meanwhile, electric properties of samples with high Al composition (>= 40%) are superior to the conventional alloy sanples. Low sheet resistance (251 Omega/square) is obtained for our samples with 40% Al content.
收录类别	SCI
资助信息	National Natural Science Foundation of China [10574148]; National Basic Research Program of China [2006CB921300]; National High Technology Research and Development Program of China [2006AA03A106, 2006AA03A107]
语种	中文
公开日期	2013-09-17
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/38867]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Ding, GJ,Guo, LW,Xing, ZG,et al. Growth and character stics of AlGaN/GaN HEMT structures with AlN/GaN superlattices as barrier layers[J]. ACTA PHYSICA SINICA,2010,59(8):5724.
APA	Ding, GJ.,Guo, LW.,Xing, ZG.,Chen, Y.,Xu, PQ.,...&Chen, H.(2010).Growth and character stics of AlGaN/GaN HEMT structures with AlN/GaN superlattices as barrier layers.ACTA PHYSICA SINICA,59(8),5724.
MLA	Ding, GJ,et al."Growth and character stics of AlGaN/GaN HEMT structures with AlN/GaN superlattices as barrier layers".ACTA PHYSICA SINICA 59.8(2010):5724.