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	The controllable electronic characteristics and Schottky barrier of graphene/GaP heterostructure via interlayer coupling and in-plane strain 期刊论文 Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 2022, 卷号: 284 作者: Lu, Xuefeng; Li, Lingxia; Guo, Xin; Ren, Junqiang; Xue, Hongtao 收藏 \| 浏览/下载：18/0 \| 提交时间：2022/08/09 Binding energy Calculations Gallium compounds Graphene Ground state Heterojunctions III-V semiconductors Ohmic contacts Schottky barrier diodes Strain Thermoelectric equipment Van der Waals forces Electronic characteristics Graphene/GaP In-plane strains Interlayer coupling Layer-spacing Micro/nano Nanoelectronic devices P-type Schottky barriers Schottky contacts
	The role of water transport in the failure of silicone rubber coating for implantable electronic devices 期刊论文 PROGRESS IN ORGANIC COATINGS, 2021, 卷号: 159, 页码: 10 作者: Du, Shiyao; Zhang, Yang; Meng, Meijiang; Tang, Ao; Li, Ying 收藏 \| 浏览/下载：36/0 \| 提交时间：2021/11/22 Organic coatings Failure mechanism Implantable electronic devices Water transfer EIS Finite element analysis
	The role of water transport in the failure of silicone rubber coating for implantable electronic devices 期刊论文 PROGRESS IN ORGANIC COATINGS, 2021, 卷号: 159, 页码: 10 作者: Du, Shiyao; Zhang, Yang; Meng, Meijiang; Tang, Ao; Li, Ying 收藏 \| 浏览/下载：32/0 \| 提交时间：2021/11/22 Organic coatings Failure mechanism Implantable electronic devices Water transfer EIS Finite element analysis
	Turning electronic performance and Schottky barrier of graphene/β-Si3N4 (0001) heterostructure by external strain and electric field 期刊论文 Vacuum, 2021, 卷号: 188 作者: Lu, Xuefeng; Li, Lingxia; Luo, Jianhua; Guo, Xin; Ren, Junqiang 收藏 \| 浏览/下载：8/0 \| 提交时间：2021/06/03 Optoelectronic devices Schottky barrier diodes Van der Waals forces Electronic performance Electronics devices External strains First principle calculations Optoelectronics devices P-type Schottky barriers Schottky contacts Si$-3$/N$-4$ Van der Waal
	Research on the electronic properties of graphene/β-Si3N4 (0001) heterojunction 期刊论文 Vacuum, 2021, 卷号: 184 作者: Cui, Zhihong; Lu, Xuefeng; Luo, Jianhua; Guo, Xin; Ren, Junqiang 收藏 \| 浏览/下载：11/0 \| 提交时间：2021/03/02 Binding energy Electric fields Electronic properties Energy gap Heterojunctions Microelectronics Silicon Van der Waals forces Built-in electric fields DTF calculations Electronic properties of graphene Electrons and holes Equilibrium interlayers Interlayer spacings Micro-electronic devices Population analysis
	Mechanisms, influencing factors, and applications of electrohydrodynamic jet printing 期刊论文 Nanotechnology Reviews, 2021, 卷号: 10, 期号: 1, 页码: 1046-1078 作者: Cai SX(蔡树向); Sun, Yalin; Wang, Zhen; Yang WG(杨文广); Li, Xiangyu 收藏 \| 浏览/下载：24/0 \| 提交时间：2021/10/03 electrohydrodynamic jet printing droplet generation process electronic devices bioprinting
	Two dimensionalization induced enhancing dielectric anisotropy of titania 期刊论文 JOURNAL OF ALLOYS AND COMPOUNDS, 2020, 卷号: 842, 页码: 7 作者: Wang, Liang; Soh, Ai Kah; Liu, Shuangyi 收藏 \| 浏览/下载：101/0 \| 提交时间：2020/08/24 DFT Two-dimensional oxide dielectrics Dielectric property Energy storage capability Future electronic devices
	Ultra-wideband solar absorber based on refractory titanium metal 期刊论文 Renewable Energy, 2020, 卷号: 158, 页码: 227-235 作者: Yu, Peiqi; Yang, Hua; Chen, Xifang; Yi, Zao; Yao, Weitang 收藏 \| 浏览/下载：3/0 \| 提交时间：2020/11/14 Absorption spectra Electromagnetic waves Magnetic materials Optoelectronic devices Plasmons Refractory materials Refractory metals Solar absorbers Solar radiation Surface plasmon resonance Titanium Ultra-wideband (UWB) Broadband absorption Electromagnetic environments Electromagnetic wave absorber High temperature condition Opto-electronic materials Titanium metals Wide spectrum
	Unveiling the pinning behavior of charged domain walls in BiFeO3 thin films via vacancy defects 期刊论文 Acta Materialia, 2020, 卷号: 186, 页码: 68-76 作者: Geng, W.R.; Tian, X.H.; Jiang, Y.X.; Zhu, Y.L.; Tang, Y.L. 收藏 \| 浏览/下载：2/0 \| 提交时间：2020/11/14 Bismuth compounds Defects Domain walls Electric field measurement Electronic states Ferroelectric materials Film growth High resolution transmission electron microscopy Interface states Iron compounds Modulation Oxygen Scanning electron microscopy Thin films Transmissions Aberration-corrected scanning transmission electron microscopies BiFeO3 thin film Charged domain wall Electronics devices Oxygen pressure Phase-field simulation Theoretical simulation Vacancy Defects
	Mapping gradient-driven morphological phase transition at the conductive domain walls of strained multiferroic films 期刊论文 PHYSICAL REVIEW B, 2019, 卷号: 100, 期号: 10 作者: Han, M. J.; Eliseev, E. A.; Morozovska, A. N.; Zhu, Y. L.; Tang, Y. L. 收藏 \| 浏览/下载：2/0 \| 提交时间：2019/11/15 Bismuth compounds Electronic properties Ferroelectric materials High resolution transmission electron microscopy Iron compounds Multiferroics Perovskite Scanning electron microscopy Transmissions Aberration-corrected scanning transmission electron microscopies Experimental evidence Functional manipulation High resolution scanning transmission electron microscopies Intrinsic mechanisms Nanoscale electronic devices Structural distortions Technological communities

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