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会议论文 [39]
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Unveiling the pinning behavior of charged domain walls in BiFeO3 thin films via vacancy defects
会议论文
作者:
Geng, W.R.
;
Tian, X.H.
;
Jiang, Y.X.
;
Zhu, Y.L.
;
Tang, Y.L.
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2020/12/18
Bismuth compounds
Defects
Domain walls
Electric field measurement
Electronic states
Ferroelectric materials
Film growth
High resolution transmission electron microscopy
Interface states
Iron compounds
Modulation
Oxygen
Scanning electron microscopy
Thin films
TransmissionsAberration-corrected scanning transmission electron microscopies
BiFeO3 thin film
Charged domain wall
Electronics devices
Oxygen pressure
Phase-field simulation
Theoretical simulation
Vacancy Defects
Application of femtosecond laser technique in single crystal diamond film separation
会议论文
作者:
Wang, Fei
;
Shan, Chao
;
Yan, Jian-ping
;
Fu, Jiao
;
Abdisa, D. Garuma
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  |  
浏览/下载:8/0
  |  
提交时间:2019/11/26
Semiconductor
Diamond film
Chemical vapor deposition
Single crystal growth
Atomistic study of the copper cluster deposition on Si(001) and Si(111) surface
会议论文
Chinese Materials Congress on Methods of Design and Characterization of Materials, Research and Development of Technological Processes, 2015, Guiyang, China, July 10, 2015 - July 14, 2015
作者:
Gong, Hengfeng
;
Li, Gongping
;
Zhang, Shixu
;
Lu, Wei
;
Wang, Lumin
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2017/01/20
Silicon
Characterization
Deposition
Film growth
Interfaces (materials)
Mixing
Molecular dynamics
Morse potential
Silicides
Substrates
Surface segregation
Cluster
Cluster deposition
Crystallographic orientations
Epitaxial relations
Film-substrate interfaces
Molecular dynamics simulations
Silicide formation
Silicon segregation
3D numerical investigation and improvement to the design of the thermal field before seeding in a multi-die edge-defined film-fed growth system for sapphire ribbon crystals
会议论文
作者:
Yu, Qinghua
;
Liu, Lijun
;
Geng, A'nan
;
Jiang, Biwen
;
Li, Zaoyang
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  |  
浏览/下载:3/0
  |  
提交时间:2019/12/03
Growth from melt
Heat transfer
Computer simulation
Edge defined film fed growth
Sapphire
Epitaxial pd-doped LaFeO3 films grown on (100) SrTiO3 by pulsed laser deposition
会议论文
2014 International Conference on Materials Science and Engineering Technology, MSET 2014, Shanghai, China, June 28, 2014 - June 29, 2014
作者:
Duan, Ying Wen
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  |  
浏览/下载:5/0
  |  
提交时间:2017/01/20
Interfaces (materials)
Engineering technology
Epitaxial growth
Microstructure
Palladium
Perovskite
Pulsed laser deposition
Strontium titanates
Thin films
Transmission electron microscopy
X ray diffraction
As-grown
Epitaxial orientation relationship
Fe sites
Film surfaces
Pulsed-laser deposition technique
Reduction treatment
Single-crystalline
Structural qualities
Preparation of CsI(Tl) scintillation film by RF magnetron sputter method and its structural and optical characterization
会议论文
ADVANCES IN MATERIALS AND MATERIALS PROCESSING, PTS 1-3, 2012-12-22
作者:
Feng, He[1]
;
Chen, Chenglong[2]
;
Chou, Mitch[3]
;
Ren, Guohao[4]
;
Xu, Jiayue[5]
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/04/30
CsI(Tl)
Thin film
Sputtering
Growth orientation
opitcal properties
OH- effect on the growth and structural properties of chemical bath deposited ZnS quantum thin films
会议论文
2nd International Conference on Mechanical Engineering, Materials and Energy, ICMEME 2012, Dalian, China, October 26, 2012 - October 27, 2012
作者:
Chen, Liangyan*
;
Fang, Chao
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2019/12/27
ZnS quantum thin film
OH-
growth
structure
Molecular dynamics simulation of deposition and growth of cu thin film on si substrate
会议论文
28th International Symposium on Rarefied Gas Dynamics (RGD), Zaragoza, SPAIN, JUL 09-13, 2012
作者:
Zhang J(张俊)
;
Liu C(刘崇)
;
Shu YH(舒勇华)
;
Fan J(樊菁)
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2013/02/26
Thin film growth
crystalline structure and orientation
surface roughness
molecular dynamics
EMBEDDED-ATOM METHOD
SURFACES
SYSTEMS
METALS
XRD analysize PTCDA film evaporatived on p-Si (110) substrate
会议论文
2012 International Symposium on Photonics and Optoelectronics, SOPO 2012, Shanghai, China, May 21, 2012 - May 23, 2012
作者:
Li, Xia
;
Sun, Shuo
;
Suo, Jian
;
Zhang, Shengdong
;
Zhang, Fujia
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2017/01/20
Substrates
Deposits
Film thickness
Growth rate
Optoelectronic devices
Photonics
Silicon
Thin films
X ray diffraction
Diffraction peaks
Growth patterns
Lattice plane
Molecular planes
Peak intensity
Peak position
Peak widths
PTCDA
PTCDA films
PTCDA thin films
Substrate planes
Substrate temperature
Technological parameters
XRD
XRD analysis
Effect of thickness on the structural, electrical and optical properties of ZnO films deposited by MBE (EI CONFERENCE)
会议论文
2011 International Conference on Advanced Design and Manufacturing Engineering, ADME 2011, September 16, 2011 - September 18, 2011, Guangzhou, China
Yang X.
;
Su S.
;
Yi X.
;
Mei T.
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2013/03/25
A set of ZnO films of different thickness have been deposited on sapphire substrates using molecular beam epitaxy (MBE) by varying the growth time and the effect of film thickness on the structural
electrical and optical properties have been investigated. The X-ray diffraction (XRD) results indicate that the full width at half maximum (FWHM) of the (002) diffraction peak is decreased as the film thickness increasing
and the stress along c-axis is stable. Scanning electron microscope (SEM) measurement shows that the grains become more uniform as the film grows thicker and the film surface present distinct hexagon shape as the film is grown up to a thickness of 500nm. The optical absorbance
Hall mobility and photoluminescence (PL) intensity are increased in accordance with the thickness of the film. (2011) Trans Tech Publications
Switzerland.
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