Effect of thickness on the structural, electrical and optical properties of ZnO films deposited by MBE (EI CONFERENCE)
Yang X. ; Su S. ; Yi X. ; Mei T.
2011
会议名称2011 International Conference on Advanced Design and Manufacturing Engineering, ADME 2011, September 16, 2011 - September 18, 2011
会议地点Guangzhou, China
关键词A set of ZnO films of different thickness have been deposited on sapphire substrates using molecular beam epitaxy (MBE) by varying the growth time and the effect of film thickness on the structural electrical and optical properties have been investigated. The X-ray diffraction (XRD) results indicate that the full width at half maximum (FWHM) of the (002) diffraction peak is decreased as the film thickness increasing and the stress along c-axis is stable. Scanning electron microscope (SEM) measurement shows that the grains become more uniform as the film grows thicker and the film surface present distinct hexagon shape as the film is grown up to a thickness of 500nm. The optical absorbance Hall mobility and photoluminescence (PL) intensity are increased in accordance with the thickness of the film. (2011) Trans Tech Publications Switzerland.
页码1271-1276
收录类别EI
内容类型会议论文
源URL[http://ir.ciomp.ac.cn/handle/181722/32991]  
专题长春光学精密机械与物理研究所_中科院长春光机所知识产出_会议论文
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Yang X.,Su S.,Yi X.,et al. Effect of thickness on the structural, electrical and optical properties of ZnO films deposited by MBE (EI CONFERENCE)[C]. 见:2011 International Conference on Advanced Design and Manufacturing Engineering, ADME 2011, September 16, 2011 - September 18, 2011. Guangzhou, China.
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