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科研机构
半导体研究所 [10]
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期刊论文 [9]
会议论文 [1]
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2011 [1]
2008 [1]
2005 [1]
2004 [2]
2003 [1]
2002 [2]
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半导体材料 [10]
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Optimization of double nanocrystalline silicon p-layers for amorphous silicon solar cells
期刊论文
cailiao gongcheng/journal of materials engineering, 2011, 期号: 8, 页码: 5-7+13
Liu, Shi-Yong
;
Zeng, Xiang-Bo
;
Peng, Wen-Bo
;
Yao, Wen-Jie
;
Xie, Xiao-Bing
;
Yang, Ping
;
Wang, Chao
;
Wang, Zhan-Guo
收藏
  |  
浏览/下载:32/0
  |  
提交时间:2012/06/14
Amorphous films
Chemical vapor deposition
Energy gap
High resolution electron microscopy
High resolution transmission electron microscopy
Hydrogen
Nanocrystalline silicon
Optical band gaps
Plasma deposition
Plasma enhanced chemical vapor deposition
Raman spectroscopy
Semiconducting silicon compounds
Solar power generation
Thin films
Transmission electron microscopy
Effect of Nitridation on Morphology, Structural Properties and Stress of AIN Films
期刊论文
chinese physics letters, 2008, 卷号: 25, 期号: 12, 页码: 4364-4367
作者:
Wei HY
;
Jiao CM
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  |  
浏览/下载:178/45
  |  
提交时间:2010/03/08
TRANSMISSION ELECTRON-MICROSCOPY
WURTZITE-TYPE CRYSTALS
VAPOR-PHASE EPITAXY
INTRINSIC STRESS
SAPPHIRE SURFACE
THIN-FILMS
GAN
GROWTH
DIFFRACTION
MECHANISM
Structural and optical properties of InAs/In0.52Al0.48As self-assembled quantum wires on InP(001)
期刊论文
journal of crystal growth, 2005, 卷号: 284, 期号: 3-4, 页码: 306-312
Wang YL
;
Chen YH
;
Wu J
;
Lei W
;
Wang ZG
;
Zeng YP
收藏
  |  
浏览/下载:124/70
  |  
提交时间:2010/03/17
high-resolution transmission electron microscopy
Microstructural and compositional characteristics of GaN films grown on a ZnO-buffered Si(111) wafer
期刊论文
micron, 2004, 卷号: 35, 期号: 6, 页码: 475-480
Luo, XH
;
Wang, RM
;
Zhang, XP
;
Zhang, HZ
;
Yu, DP
;
Luo, MC
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  |  
浏览/下载:145/32
  |  
提交时间:2010/03/09
transmission electron microscopy
electron energy loss spectroscopy
molecular beam epitaxy
gallium nitride
CHEMICAL-VAPOR-DEPOSITION
EPITAXY
LAYER
Microstructural and compositional characteristics of GaN films grown on a ZnO-buffered Si(111) wafer
会议论文
international wuhan symposium on advanced electron microscopy (iwsaem), wuhan, peoples r china, oct 17-21, 2003
Luo XH
;
Wang RM
;
Zhang XP
;
Zhang HZ
;
Yu DP
;
Luo MC
收藏
  |  
浏览/下载:18/1
  |  
提交时间:2010/10/29
transmission electron microscopy
electron energy loss spectroscopy
molecular beam epitaxy
gallium nitride
CHEMICAL-VAPOR-DEPOSITION
EPITAXY
LAYER
Microstructure of GaN films grown on Si(111) substrates by metalorganic chemical vapor deposition
期刊论文
journal of crystal growth, 2003, 卷号: 256, 期号: 3-4, 页码: 416-423
Hu GQ
;
Kong X
;
Wan L
;
Wang YQ
;
Duan XF
;
Lu Y
;
Liu XL
收藏
  |  
浏览/下载:25/0
  |  
提交时间:2010/08/12
amorphous layer
dislocation
transmission electron microscopy
metalorganic chemical vapor deposition
GaN
MOLECULAR-BEAM EPITAXY
HIGH-QUALITY GAN
HETEROEPITAXIAL GROWTH
ELECTRON-DIFFRACTION
DEFECT STRUCTURE
HETEROSTRUCTURE
DISLOCATIONS
MICROSCOPY
(111)SI
LAYER
Structural characterization of epitaxial lateral overgrown GaN on patterned GaN/GaAs(001) substrates
期刊论文
journal of crystal growth, 2002, 卷号: 246, 期号: 1-2, 页码: 69-72
Shen XM
;
Fu Y
;
Feng G
;
Zhang BS
;
Feng ZH
;
Wang YT
;
Yang H
收藏
  |  
浏览/下载:47/0
  |  
提交时间:2010/08/12
transmission electron microscopy
X-ray diffraction
epitaxial lateral overgrowth
metalorganic vapor phase epitaxy
cubic gallium nitride
CHEMICAL-VAPOR-DEPOSITION
CUBIC GAN
PHASE EPITAXY
REDUCTION
GROWTH
Structural properties and Raman measurement of AlN films grown on Si (111) by NH3-GSMBE
期刊论文
journal of crystal growth, 2002, 卷号: 244, 期号: 3-4, 页码: 229-235
Luo MC
;
Wang XL
;
Li JM
;
Liu HX
;
Wang L
;
Sun DZ
;
Zeng YP
;
Lin LY
收藏
  |  
浏览/下载:36/0
  |  
提交时间:2010/08/12
atomic force microscopy
Raman
transmission electron microscopy
molecular beam epitaxy
aluminium nitride
ELECTRON-AFFINITY
GAN
SI(111)
Microstructure evolution of GaN buffer layer on MgAl2O4 substrate
期刊论文
journal of crystal growth, 1998, 卷号: 193, 期号: 4, 页码: 478-483
作者:
Han PD
收藏
  |  
浏览/下载:37/0
  |  
提交时间:2010/08/12
GaN
MgAl2O4
buffer layer
threading dislocation
transmission electron microscopy
LASER-DIODES
GROWN GAN
FILMS
SAPPHIRE
NITRIDE
DEFECTS
CHEMICAL-VAPOR-DEPOSITION
Properties of cubic GaN grown by MBE
期刊论文
materials science and engineering b-solid state materials for advanced technology, 1997, 卷号: 43, 期号: 0, 页码: 215-221
Brandt O
;
Yang H
;
Mullhauser JR
;
Trampert A
;
Ploog KH
收藏
  |  
浏览/下载:8/0
  |  
提交时间:2010/11/17
cubic gallium arsenide film
molecular beam epitaxy
photoluminescence
transmission electron microscopy
MOLECULAR-BEAM EPITAXY
GALLIUM NITRIDE
GAAS
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