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浏览/检索结果: 共8条，第1-8条 帮助 限定条件 专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 High-Frequency Switching Properties and Low Oxide Electric Field and Energy Loss in a Reverse-Channel 4H-SiC UMOSFET 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 卷号: 67, 期号: 10, 页码: 4046-4053 作者:  Zhanwei Shen;   Feng Zhang ;   Member;   IEEE;   Guoguo Yan;   Zhengxin Wen;   Wanshun Zhao;   Lei Wang;   Xingfang Liu;   Guosheng Sun;   Yiping Zeng 收藏  |  浏览/下载：10/0  |  提交时间：2021/05/24 The composition and interfacial properties of annealed AlN films deposited on 4H-SiC by atomic layer deposition 期刊论文 Materials Science in Semiconductor Processing, 2019, 卷号: 94, 页码: 107-115 作者:  Jun Chen ;   Bowen Lv ;   Feng Zhang ;   Yinshu Wang ;   Xingfang Liu ;   Guoguo Yan ;   Zhanwei Shen ;   Zhengxin Wen ;   Lei Wang ;   Wanshun Zhao ;   Guosheng Sun ;   Chao Liu ;   Yiping Zeng 收藏  |  浏览/下载：6/0  |  提交时间：2020/07/31 A Novel Silicon Carbide Accumulation Channel Injection Enhanced Gate Transistor With Buried Barrier Under Shielding Region 期刊论文 IEEE ELECTRON DEVICE LETTERS, 2017, 卷号: 38, 期号: 7, 页码: 941-944 作者:  Zhengxin Wen;  Feng Zhang;  Member;  IEEE;  Zhanwei Shen 收藏  |  浏览/下载：36/0  |  提交时间：2018/06/01 Effect of annealing process on the surface roughness in multiple Al implanted4H-SiC 期刊论文 journal of semiconductors, 2011, 卷号: 32, 期号: 7, 页码: 72002 Wu, Hailei; Sun, Guosheng; Yang, Ting; Yan, Guoguo; Wang, Lei; Zhao, Wanshun; Liu, Xingfang; Zeng, Yiping; Wen, Jialiang 收藏  |  浏览/下载：28/0  |  提交时间：2012/06/14 Aluminum  Annealing  Ion implantation  Pressure effects  Semiconducting silicon compounds  Silicon carbide  Surface roughness   Multi-wafer3C-SiC thin films grown on Si(100) in a vertical HWLPCVD reactor 期刊论文 journal of semiconductors, 2011, 卷号: 32, 期号: 6, 页码: 63001 Yan, Guoguo; Sun, Guosheng; Wu, Hailei; Wang, Lei; Zhao, Wanshun; Liu, Xingfang; Zeng, Yiping; Wen, Jialiang 收藏  |  浏览/下载：23/0  |  提交时间：2012/06/14 Chemical vapor deposition  Deposition  Electric resistance  Epitaxial growth  Film growth  Sheet resistance  Silicon carbide  Silicon wafers   High-quality homoepitaxial layers grown on4H-SiC at a high growth rate by vertical LPCVD 期刊论文 journal of semiconductors, 2011, 卷号: 32, 期号: 4, 页码: 43005 Wu, Hailei; Sun, Guosheng; Yang, Ting; Yan, Guoguo; Wang, Lei; Zhao, Wanshun; Liu, Xingfang; Zeng, Yiping; Wen, Jialiang 收藏  |  浏览/下载：23/0  |  提交时间：2012/06/14 Epitaxial growth  Ethylene  Growth rate  Morphology  Surface roughness   Observation of n-shaped negative differential resistance in gaas-based modulation-doped field effect transistor with inas quantum dots 期刊论文 Japanese journal of applied physics, 2010, 卷号: 49, 期号: 10, 页码: 5 作者:  Li, Yueqiang;  Wang, Xiaodong;  Xu, Xiaona;  Liu, Wen;  Chen, Yanling 收藏  |  浏览/下载：33/0  |  提交时间：2019/05/12 Observation of N-Shaped Negative Differential Resistance in GaAs-Based Modulation-Doped Field Effect Transistor with InAs Quantum Dots 期刊论文 japanese journal of applied physics, 2010, 卷号: 49, 期号: 10, 页码: art. no. 104002 Li YQ (Li Yueqiang); Wang XD (Wang Xiaodong); Xu XN (Xu Xiaona); Liu W (Liu Wen); Chen YL (Chen Yanling); Yang FH (Yang Fuhua); Tan PH (Tan Pingheng); Zeng YP (Zeng Yiping) 收藏  |  浏览/下载：32/0  |  提交时间：2010/11/14 REAL-SPACE TRANSFER  2-DIMENSIONAL ELECTRON-GAS