CORC

在结果中检索

CORC

浏览/检索结果: 共56条，第1-10条 帮助

限定条件                
已选(0)清除 条数/页：   排序方式：
Comparative Study of SiC Planar MOSFETs With Different p-Body Designs 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 卷号: 67, 期号: 3, 页码: 1071-1076
作者:  Weijiang Ni ;   Xiaoliang Wang ;   Miaoling Xu ;   Mingshan Li;   Chun Feng;   Hongling Xiao;   Lijuan Jiang;   Wei Li;   Quan Wang
收藏  |  浏览/下载：4/0  |  提交时间：2021/11/05
Hybrid-gate structure designed for high-performance normally-off p-GaN high-electron-mobility transistor 期刊论文
Japanese Journal of Applied Physics, 2020, 卷号: 59, 期号: 11, 页码: 111001
作者:  Di Niu;   Quan Wang;   Wei Li;   Changxi Chen;   Jiankai Xu;   Lijuan Jiang;   Chun Feng;   Hongling Xiao;   Qian Wang;   Xiangang Xu;   Xiaoliang Wang
收藏  |  浏览/下载：9/0  |  提交时间：2021/05/24
Influence of Fe in the buffer layer on the laser lift-off of AlGaN/GaN HEMT film: phenomena and mechanism 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2020, 卷号: 35, 期号: 9, 页码: 095024
作者:  Fen Guo;   Quan Wang;   Hongling Xiao;   Lijuan Jiang;   Wei Li;   Chun Feng;   Xiaoliang Wang;  Zhanguo Wang
收藏  |  浏览/下载：52/0  |  提交时间：2021/05/25
Roles of polarization effects in InGaN/GaN solar cells and comparison of p-i-n and n-i-p structures 期刊论文
OPTICS EXPRESS, 2018, 卷号: 26, 期号: 22, 页码: A946-A954
作者:  KUN WANG ;   QUAN WANG ;   JIAYAN CHU ;   HONGLING XIAO ;   XIAOLIANG WANG ;   ;   ZHANGUO WANG
收藏  |  浏览/下载：18/0  |  提交时间：2019/11/15
Gate Leakage and Breakdown Characteristics of AlGaN/GaN High-Electron-Mobility Transistors with Fe Delta-Doped Buffer 期刊论文
NANOSCIENCE AND NANOTECHNOLOGY LETTERS, 2018, 卷号: 10, 期号: 2, 页码: 185-189
作者:  Meilan Hao ;   Quan Wang ;   Lijuan Jiang ;   Chun Feng ;   Changxi Chen ;   Cuimei Wang ;   Hongling Xiao ;   Fengqi Liu ;   Xiangang Xu ;   Xiaoliang Wang ;   Zhanguo Wang
收藏  |  浏览/下载：34/0  |  提交时间：2019/11/15
Optimization of growth and fabrication techniques to enhance the InGaN/GaN multiple quantum well solar cells performance 期刊论文
Superlattices and Microstructures, 2017, 卷号: 109, 页码: 194-200
作者:  Shiming Liu;  Quan Wang;  Hongling Xiao;  Kun Wang;  Cuimei Wang
收藏  |  浏览/下载：34/0  |  提交时间：2018/05/23
Theoretical investigations on the N-polar GaN/AlxGa1-xN/GaN heterostructures: Considering the existence of both two-dimensional hole and electron gases 期刊论文
journal of applied physics, 2016, 卷号: 120, 期号: 12, 页码: 124501
Junda Yan; Quan Wang; Xiaoliang Wang; Chun Feng; Hongling Xiao; Shiming Liu; Jiamin Gong; Fengqi Liu; Baiquan Li
收藏  |  浏览/下载：28/0  |  提交时间：2017/03/10
Effects of a GaN cap layer on the reliability of AlGaN/GaN Schottky diodes 期刊论文
phys. status solidi a, 2015, 卷号: 212, 期号: 5, 页码: 1158-1161
He Kang; Quan Wang; Hongling Xiao; Cuimei Wang; Lijuan Jiang; Chun Feng; Hong Chen; Haibo Yin; Shenqi Qu; Enchao Peng; Jiamin Gong; Xiaoliang Wang; Baiquan Li; Zhanguo Wang; Xun Hou
收藏  |  浏览/下载：30/0  |  提交时间：2016/03/29
A Novel Multi-Finger Gate Structure of AlGaN/GaN High Electron Mobility Transistor 期刊论文
chin. phys. lett., 2015, 卷号: 32, 期号: 5, 页码: 58501-58504
Lei Cui; Quan Wang; XiaoLiang Wang; HongLing Xiao; CuiMei Wang; LiJuan Jiang; Chun Feng; HaiBo Yin; JiaMin Gong; BaiQuan Li; ZhanGuo Wang
收藏  |  浏览/下载：28/0  |  提交时间：2016/03/29
Tunable density of two-dimensional electron gas in GaN-based heterostructures The effects of buffer acceptor and channel width 期刊论文
journal of applied physics, 2013, 卷号: 114, 期号: 15, 页码: 4507
Enchao Peng, Xiaoliang Wang, Hongling Xiao, Cuimei Wang, Haibo Yin, Hong Chen, Chun Feng, Lijuan Jiang, Shenqi Qu, He Kang, Xun Hou and Zhanguo Wang
收藏  |  浏览/下载：22/0  |  提交时间：2014/03/18

©版权所有 ©2017 CSpace - Powered by CSpace