Comparative Study of SiC Planar MOSFETs With Different p-Body Designs

	Comparative Study of SiC Planar MOSFETs With Different p-Body Designs
	Weijiang Ni ; Xiaoliang Wang ; Miaoling Xu ; Mingshan Li; Chun Feng; Hongling Xiao; Lijuan Jiang; Wei Li; Quan Wang
刊名	IEEE TRANSACTIONS ON ELECTRON DEVICES
	2020
卷号	67 期号:3 页码:1071-1076
公开日期	2020
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/30504]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Weijiang Ni ; Xiaoliang Wang ; Miaoling Xu ; Mingshan Li; Chun Feng; Hongling Xiao; Lijuan Jiang; Wei Li; Quan Wang. Comparative Study of SiC Planar MOSFETs With Different p-Body Designs[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2020,67(3):1071-1076.
APA	Weijiang Ni ; Xiaoliang Wang ; Miaoling Xu ; Mingshan Li; Chun Feng; Hongling Xiao; Lijuan Jiang; Wei Li; Quan Wang.(2020).Comparative Study of SiC Planar MOSFETs With Different p-Body Designs.IEEE TRANSACTIONS ON ELECTRON DEVICES,67(3),1071-1076.
MLA	Weijiang Ni ; Xiaoliang Wang ; Miaoling Xu ; Mingshan Li; Chun Feng; Hongling Xiao; Lijuan Jiang; Wei Li; Quan Wang."Comparative Study of SiC Planar MOSFETs With Different p-Body Designs".IEEE TRANSACTIONS ON ELECTRON DEVICES 67.3(2020):1071-1076.