Gate Leakage and Breakdown Characteristics of AlGaN/GaN High-Electron-Mobility Transistors with Fe Delta-Doped Buffer | |
Meilan Hao ; Quan Wang ; Lijuan Jiang ; Chun Feng ; Changxi Chen ; Cuimei Wang ; Hongling Xiao ; Fengqi Liu ; Xiangang Xu ; Xiaoliang Wang ; Zhanguo Wang | |
刊名 | NANOSCIENCE AND NANOTECHNOLOGY LETTERS |
2018 | |
卷号 | 10期号:2页码:185-189 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/29100] |
专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
推荐引用方式 GB/T 7714 | Meilan Hao ; Quan Wang ; Lijuan Jiang ; Chun Feng ; Changxi Chen ; Cuimei Wang ; Hongling Xiao ; Fengqi Liu ; Xiangang Xu ; Xiaoliang Wang ; Zhanguo Wang. Gate Leakage and Breakdown Characteristics of AlGaN/GaN High-Electron-Mobility Transistors with Fe Delta-Doped Buffer[J]. NANOSCIENCE AND NANOTECHNOLOGY LETTERS,2018,10(2):185-189. |
APA | Meilan Hao ; Quan Wang ; Lijuan Jiang ; Chun Feng ; Changxi Chen ; Cuimei Wang ; Hongling Xiao ; Fengqi Liu ; Xiangang Xu ; Xiaoliang Wang ; Zhanguo Wang.(2018).Gate Leakage and Breakdown Characteristics of AlGaN/GaN High-Electron-Mobility Transistors with Fe Delta-Doped Buffer.NANOSCIENCE AND NANOTECHNOLOGY LETTERS,10(2),185-189. |
MLA | Meilan Hao ; Quan Wang ; Lijuan Jiang ; Chun Feng ; Changxi Chen ; Cuimei Wang ; Hongling Xiao ; Fengqi Liu ; Xiangang Xu ; Xiaoliang Wang ; Zhanguo Wang."Gate Leakage and Breakdown Characteristics of AlGaN/GaN High-Electron-Mobility Transistors with Fe Delta-Doped Buffer".NANOSCIENCE AND NANOTECHNOLOGY LETTERS 10.2(2018):185-189. |
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