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浏览/检索结果: 共14条，第1-10条 帮助 限定条件 专题：北京大学    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Air stagnation in China (1985-2014): climatological mean features and trends 期刊论文 ATMOSPHERIC CHEMISTRY AND PHYSICS, 2017 Huang, Qianqian; Cai, Xuhui; Song, Yu; Zhu, Tong 收藏  |  浏览/下载：13/0  |  提交时间：2017/12/03 CLIMATE-CHANGE  UNITED-STATES  PRECIPITATION CHANGES  EASTERN CHINA  POLLUTION  AEROSOLS  QUALITY  OZONE  HAZE  SENSITIVITY   Design and Simulation of a Novel Graded-Channel Heterojunction Tunnel FET With High I-ON/I-OFF Ratio and Steep Swing 期刊论文 IEEE ELECTRON DEVICE LETTERS, 2017 Zhu, Jiadi; Zhao, Yang; Huang, Qianqian; Chen, Cheng; Wu, Chunlei; Jia, Rundong; Huang, Ru 收藏  |  浏览/下载：8/0  |  提交时间：2017/12/03 Tunnelfield-effect transistor  band-to-band tunneling  heterostructure  I-ON/I-OFF ratio  sub-threshold slope  FIELD-EFFECT TRANSISTORS  V COMPOUND SEMICONDUCTORS   New Understanding of Random Telegraph Noise Amplitude in Tunnel FETs 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017 Chen, Cheng; Huang, Qianqian; Zhu, Jiadi; Zhao, Yang; Guo, Lingyi; Huang, Ru 收藏  |  浏览/下载：9/0  |  提交时间：2017/12/03 Amplitude  annealing process  band-to-band tunneling (BTBT) generation rate  nonuniformity  random dopant fluctuation (RDF)  random telegraph noise (RTN)  source doping concentration  tunnel FET (TFET)  FIELD-EFFECT TRANSISTORS  RANDOM DOPANT FLUCTUATION  LINE-EDGE ROUGHNESS  1/F NOISE  ELECTRICAL NOISE  CMOS DEVICES  VARIABILITY  IMPACT  TFET   A Novel Tunnel FET Design Through Adaptive Bandgap Engineering With Constant Sub-Threshold Slope Over 5 Decades of Current and High I-ON/I-OFF Ratio 期刊论文 IEEE ELECTRON DEVICE LETTERS, 2017 Zhao, Yang; Wu, Chunlei; Huang, Qianqian; Chen, Cheng; Zhu, Jiadi; Guo, Lingyi; Jia, Rundong; Lv, Zhu; Yang, Yuchao; Li, Ming; Huang, Ru 收藏  |  浏览/下载：8/0  |  提交时间：2017/12/03 Band-to-band tunneling (BTBT)  Hetero-structure  self-adaptively current replenishing  sub-threshold slope  tunnel field-effect transistor   First foundry platform of complementary tunnel-FETs in CMOS baseline technology for ultralow-power IoT applications: Manufacturability, variability and technology roadmap 其他 2016-01-01 Huang, Qianqian; Jia, Rundong; Chen, Cheng; Zhu, Hao; Guo, Lingyi; Wang, Junyao; Wang, Jiaxin; Wu, Chunlei; Wang, Runsheng; Bu, Weihai; Kang, Jing; Wang, Wenbo; Wu, Hanming; Lee, Shiuh-Wuu; Wang, Yangyuan; Huang, Ru 收藏  |  浏览/下载：6/0  |  提交时间：2017/12/03 Deep Insights into Dielectric Breakdown in Tunnel FETs with Awareness of Reliability and Performance Co-Optimization 其他 2016-01-01 Huang, Qianqian; Jia, Rundong; Zhu, Jiadi; Lv, Zhu; Wang, Jiaxin; Chen, Cheng; Zhao, Yang; Wang, Runsheng; Bu, Weihai; Wang, Wenbo; Kang, Jin; Hua, Kelu; Wu, Hanming; Yu, Shaofeng; Wang, Yangyuan; Huang, Ru 收藏  |  浏览/下载：5/0  |  提交时间：2017/12/03 Comprehensive investigation and design of Tunnel FET-based SRAM 其他 2015-01-01 Zhu, Hao; Huang, Qianqian; Guo, Lingyi; Yang, Libo; Ye, Le; Huang, Ru 收藏  |  浏览/下载：3/0  |  提交时间：2017/12/03 Comprehensive performance re-assessment of TFETs with a novel design by gate and source engineering from device/circuit perspective 其他 2015-01-01 Huang, Qianqian; Huang, Ru; Wu, Chunlei; Zhu, Hao; Chen, Cheng; Wang, Jiaxin; Guo, Lingyi; Wang, Runsheng; Ye, Le; Wang, Yangyuan 收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03 Multi-finger Schottky-Barrier tunneling FET with hybrid operation mechanism for steep transition and high on current 其他 2015-01-01 Huang, Ru; Huang, Qianqian; Wu, Chunlei; Wang, Jiaxin; Chen, Cheng; Zhu, Hao; Guo, Lingyi; Wang, Yangyuan 收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03 First Foundry Platform of Complementary Tunnel-FETs in CMOS Baseline Technology for Ultralow-Power IoT Applications: Manufacturability, Variability and Technology Roadmap 其他 2015-01-01 Huang, Qianqian; Jia, Rundong; Chen, Cheng; Zhu, Hao; Guo, Lingyi; Wang, Junyao; Wang, Jiaxin; Wu, Chunlei; Wang, Runsheng; Bu, Weihai; Kang, Jing; Wang, Wenbo; Wu, Hanming; Lee, Shiuh-Wuu; Wang, Yangyuan; Huang, Ru 收藏  |  浏览/下载：3/0  |  提交时间：2017/12/03 TRANSISTORS