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	Comprehensive investigation and design of Tunnel FET-based SRAM
	Zhu, Hao ; Huang, Qianqian ; Guo, Lingyi ; Yang, Libo ; Ye, Le ; Huang, Ru
	2015
英文摘要	In this work, the impacts of electrical characteristics of Tunnel FET (TFET) on the SRAM design are systemically investigated for the first time from the perspective of memory array. A novel 10T TFET SRAM design is also proposed to overcome the challenges and improve the circuit stability. By using a calibrated compact model, the simulated static power of 10T TFET SRAM can be much lower than traditional 6T MOSFET SRAM, especially at the low supply voltage of 0.5V. In addition, the cell's stability is also largely improved with the largest noise margin compared with reported 7T TFET SRAM design and traditional 6T MOSFET SRAM. ? 2015 IEEE.; EI
语种	英语
出处	2015 China Semiconductor Technology International Conference, CSTIC 2015
DOI标识	10.1109/CSTIC.2015.7153332
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/423758]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Zhu, Hao,Huang, Qianqian,Guo, Lingyi,et al. Comprehensive investigation and design of Tunnel FET-based SRAM. 2015-01-01.

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