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Design of adaptive strong tracking and robust Kalman filter 会议论文
Proceedings of the 33rd Chinese Control Conference, CCC 2014, July 28, 2014 - July 30, 2014, Nanjing, China
Song K.; Cong S.; Deng K.; Shang W.; Kong D.; Shen H.
收藏  |  浏览/下载：16/0  |  提交时间：2015/04/27
Response spectrum 0.9-2.65 m of In0.82Ga0.18As detectors by two-step growth technique 会议论文
2012 International Conference on Material Sciences and Manufacturing Technology, ICMSMT 2012, October 5, 2012 - October 6, 2012, Dalian, China
Zhang T.; Miao G.; Fu J.; Ban D.; Shen Z.; Lin H.; Zou X.; Peng H.
收藏  |  浏览/下载：36/0  |  提交时间：2014/05/15
Solar blind ultraviolet photodetectors based on MgZnO thin films 会议论文
Advanced Optoelectronics for Energy and Environment, AOEE 2013, May 25, 2013 - May 26, 2013, Wuhan, China
Zhang Z. Z.; Wang L. K.; Han S.; Zheng J.; Xie X. H.; Shen D. Z.
收藏  |  浏览/下载：12/0  |  提交时间：2014/05/15
Response spectrum 0.9-2.65 m of In0.82Ga0.18As detectors by two-step growth technique (EI CONFERENCE) 会议论文
2012 International Conference on Material Sciences and Manufacturing Technology, ICMSMT 2012, October 5, 2012 - October 6, 2012, Dalian, China
Zhang T.; Miao G.; Fu J.; Ban D.; Shen Z.; Lin H.; Zou X.; Peng H.
收藏  |  浏览/下载：20/0  |  提交时间：2013/03/25
InP/In0.82Ga0.18As/InP heterostructure used for infrared detector were grown on (100) S-doped InP substrates using two-step growth technique by low temperature metal-organic chemical vapor deposition. The growth was performed using TMIn  TMGa  AsH3  and PH3 as growth precursors in a horizontal reactor. The substrates on a graphite susceptor were heated by inductively coupling RF power  their temperatures were detected by a thermocouple  and the reactor pressure was kept at 10000 Pa. The growth structure of detector included In0.82Ga0.18As buffer with the thickness of 100 nm  In0.82Ga0.18As absorption layer with the thickness of 2.8 m  and the InP cap with the thickness of 0.8 m. The planar type of p-i-n detector was fabricated by Zn diffusion. The properties of In0.82Ga0.18As detector were studied  the curves of the I-V characteristics  the range of response spectrum  and the detectivity (D*) were obtained. (2013) Trans Tech Publications  Switzerland.  
The design of the data communication and display system based on GeoCOM technology (EI CONFERENCE) 会议论文
2012 5th International Symposium on Computational Intelligence and Design, ISCID 2012, October 28, 2012 - October 29, 2012, Hangzhou, China
Geng T.-W.; Wang Z.-Q.; Li D.-N.; Shen C.-W.
收藏  |  浏览/下载：16/0  |  提交时间：2013/03/25
InGaAs nanoflowers grown by MOCVD (EI CONFERENCE) 会议论文
2012 Spring International Conference on Material Sciences and Technology, MST-S, May 27, 2012 - May 30, 2012, Xi'an, China
Zhang T.; Miao G.; Fu J.; Ban D.; Shen Z.; Lin H.; Zou X.; Peng H.
收藏  |  浏览/下载：17/0  |  提交时间：2013/03/25
Control of N/N2 species ratio in NO plasma for p-type doping of ZnO (EI CONFERENCE) 会议论文
Chen X.; Zhang Z.; Yao B.; Jiang M.; Wang S.; Li B.; Shan C.; Liu L.; Zhao D.; Shen D.
收藏  |  浏览/下载：15/0  |  提交时间：2013/03/25
Nitrogen-doped ZnO thin films were grown on c-plane sapphire (Al 2O3) substrates via plasma-assisted molecular beam epitaxy using plasma activated nitric oxide (NO) as the oxygen source and dopant. X-ray diffraction measurements indicate that a small NO flux benefits the crystal quality of the thin films. Hall effect measurements indicate that the electron density of the ZnO films decreases gradually with decreasing NO flux  and the conduction reverses to p-type at a certain flux. Optical emission spectra indicate that the N atom content in the NO plasma increases with decreasing NO flux  and the origin of this is discussed. X-ray photoelectron spectroscopy measurements demonstrate that the number of N atom occupied O sites in the ZnO lattice increases correspondingly. 2011 American Institute of Physics.  
Automatic bridge extraction for optical images (EI CONFERENCE) 会议论文
6th International Conference on Image and Graphics, ICIG 2011, August 12, 2011 - August 15, 2011, Hefei, Anhui, China
Gu D.-Y.; Zhu C.-F.; Shen H.; Hu J.-Z.; Chang H.-X.
收藏  |  浏览/下载：17/0  |  提交时间：2013/03/25
This paper describes a novel hierarchy algorithm for extracting bridges over water in optical images. To reduce the omission of bridges by searching the edge  we extract the river regions which the bridges are included in. Firstly  we segment the optical image to get the coarse water bodies using iterative threshold  eliminate the noise regions and add the missing regions based on k-means clustering with texture information and spatial coherence. Then  the blanks are connected based on shape features and candidate bridge regions are segmented from river regions. Finally  the bridges are verified by geometric information and the ubiety between bridges and river. The results show that this approach is efficient and effective for extracting bridges in satellite image from Google Earth and in aerial optical images acquired by unmanned aerial vehicle. 2011 IEEE.  
Structural and photoluminescence properties of aligned Sb-doped ZnO nanocolumns synthesized by the hydrothermal method (EI CONFERENCE) 会议论文
Fang X.; Li J.; Zhao D.; Li B.; Zhang Z.; Shen D.; Wang X.; Wei Z.
收藏  |  浏览/下载：18/0  |  提交时间：2013/03/25
Ultraviolet photodetector fabricated from atomic-layer-deposited ZnO films (EI CONFERENCE) 会议论文
Shan C. X.; Zhang J. Y.; Yao B.; Shen D. Z.; Fan X. W.; Choy K. L.
收藏  |  浏览/下载：20/0  |  提交时间：2013/03/25
Zinc oxide (ZnO) films have been prepared on glass substrate in layer-by-layer mode using an atomic-layer deposition (ALD) technique  and a metal-semiconductor-metal structured photodetector has been fabricated on the ZnO films employing interdigital Au as metal contacts. The photodetector shows a cutoff wavelength at around 390 nm and has an obvious responsivity in the whole UVA spectral range. Because the response of the ZnO photodetector covers the whole UV solar irradiation that can reach the earth  the photodetector promises to be useful in monitoring UV solar irradiation to protect people from harm caused by the solar irradiation. Furthermore  the capability of preparing large-area uniform ZnO films of ALD makes it favorable for possible mass production of this kind of photodetector. 2009 American Vacuum Society.  

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