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	Control of N/N2 species ratio in NO plasma for p-type doping of ZnO (EI CONFERENCE)
	Chen X. ; Zhang Z. ; Yao B. ; Jiang M. ; Wang S. ; Li B. ; Shan C. ; Liu L. ; Zhao D. ; Shen D.
	2011
关键词	Nitrogen-doped ZnO thin films were grown on c-plane sapphire (Al 2O3) substrates via plasma-assisted molecular beam epitaxy using plasma activated nitric oxide (NO) as the oxygen source and dopant. X-ray diffraction measurements indicate that a small NO flux benefits the crystal quality of the thin films. Hall effect measurements indicate that the electron density of the ZnO films decreases gradually with decreasing NO flux and the conduction reverses to p-type at a certain flux. Optical emission spectra indicate that the N atom content in the NO plasma increases with decreasing NO flux and the origin of this is discussed. X-ray photoelectron spectroscopy measurements demonstrate that the number of N atom occupied O sites in the ZnO lattice increases correspondingly. 2011 American Institute of Physics.
收录类别	EI
内容类型	会议论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/34048]
专题	长春光学精密机械与物理研究所_中科院长春光机所知识产出_会议论文
推荐引用方式 GB/T 7714	Chen X.,Zhang Z.,Yao B.,et al. Control of N/N2 species ratio in NO plasma for p-type doping of ZnO (EI CONFERENCE)[C]. 见:.

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