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科研机构
半导体研究所 [12]
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期刊论文 [12]
发表日期
2012 [3]
2011 [2]
2010 [2]
2008 [1]
2006 [3]
2005 [1]
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半导体材料 [12]
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Effect of growth temperature on surface morphology and structure of InAs/GaSb superlattices grown by metalorganic chemical vapor deposition
期刊论文
journal of crystal growth, 2012, 卷号: 359, 页码: 55-59
Li LG (Li, Li-Gong)
;
Liu SM (Liu, Shu-Man)
;
Luo S (Luo, Shuai)
;
Yang T (Yang, Tao)
;
Wang LJ (Wang, Li-Jun)
;
Liu JQ (Liu, Jun-Qi)
;
Liu FQ (Liu, Feng-Qi)
;
Ye XL (Ye, Xiao-Ling)
;
Xu B (Xu, Bo)
;
Wang ZG (Wang, Zhan-Guo)
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2013/03/26
Formation of AsxSb1-x mixing interfaces in InAs/GaSb superlattices grown by metalorganic chemical vapor deposition
期刊论文
epl, 2012, 卷号: 97, 期号: 3, 页码: 36001
Li, LG
;
Liu, SM
;
Luo, SA
;
Yang, T
;
Wang, LJ
;
Liu, FQ
;
Ye, XL
;
Xu, B
;
Wang, ZG
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2013/03/17
Metalorganic chemical vapor deposition growth of InAs/GaSb type II superlattices with controllable As (x) Sb1-x interfaces
期刊论文
nanoscale research letters, 2012, 卷号: 7, 页码: 160
Li, LG
;
Liu, SM
;
Luo, S
;
Yang, T
;
Wang, LJ
;
Liu, FQ
;
Ye, XL
;
Xu, B
;
Wang, ZG
收藏
  |  
浏览/下载:8/0
  |  
提交时间:2013/03/17
Effect of Interface Bond Type on the Structure of InAs/GaSb Superlattices Grown by Metalorganic Chemical Vapor Deposition
期刊论文
chinese physics letters, 2011, 卷号: 28, 期号: 11, 页码: 116802
Li LG (Li Li-Gong)
;
Liu SM (Liu Shu-Man)
;
Luo S (Luo Shuai)
;
Yang T (Yang Tao)
;
Wang LJ (Wang Li-Jun)
;
Liu FQ (Liu Feng-Qi)
;
Ye XL (Ye Xiao-Ling)
;
Xu B (Xu Bo)
;
Wang ZG (Wang Zhan-Guo)
收藏
  |  
浏览/下载:9/0
  |  
提交时间:2012/02/21
1.3-mu m In(Ga)As Quantum-Dot VCSELs Fabricated by Dielectric-Free Approach With Surface-Relief Process
期刊论文
ieee photonics technology letters, 2011, 卷号: 23, 期号: 2, 页码: 91-93
Xu DW
;
Yoon SF
;
Ding Y
;
Tong CZ
;
Fan WJ
;
Zhao LJ
收藏
  |  
浏览/下载:100/2
  |  
提交时间:2011/07/05
Dielectric-free approach
quantum dot (QD)
surface-relief technique
vertical-cavity surface-emitting lasers (VCSELs)
EMITTING LASERS
The Fabrication of Eight-Channel DFB Laser Array Using Sampled Gratings
期刊论文
ieee photonics technology letters, 2010, 卷号: 22, 期号: 5, 页码: 353-355
Zhu HL (Zhu Hongliang)
;
Xu XD (Xu Xiaodong)
;
Wang H (Wang Huan)
;
Kong DH (Kong Duanhua)
;
Liang S (Liang Song)
;
Zhao LJ (Zhao Lingjuan)
;
Wang W (Wang Wei)
收藏
  |  
浏览/下载:250/56
  |  
提交时间:2010/04/22
Distributed-feedback (DFB) lasers
sampled gratings
semiconductor laser arrays
wavelength-division multiplexing (WDM)
Microphotoluminescence investigation of InAs quantum dot active region in 1.3 mu m vertical cavity surface emitting laser structure
期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 7, 页码: art. no. 073111
Ding Y (Ding Y.)
;
Fan WJ (Fan W. J.)
;
Ma BS (Ma B. S.)
;
Xu DW (Xu D. W.)
;
Yoon SF (Yoon S. F.)
;
Liang S (Liang S.)
;
Zhao LJ (Zhao L. J.)
;
Wasiak M (Wasiak M.)
;
Czyszanowski T (Czyszanowski T.)
;
Nakwaski W (Nakwaski W.)
收藏
  |  
浏览/下载:31/0
  |  
提交时间:2010/11/14
VAPOR-PHASE EPITAXY
PHOTOVOLTAGE SPECTROSCOPY
PHOTOLUMINESCENCE
MODES
Temperature dependence of surface quantum dots grown under frequent growth interruption
期刊论文
physica e-low-dimensional systems & nanostructures, 2008, 卷号: 40, 期号: 3, 页码: 503-506
Yu, LK
;
Xu, B
;
Wang, ZG
;
Jin, P
;
Zhao, C
;
Lei, W
;
Sun, J
;
Hu, LJ
收藏
  |  
浏览/下载:24/1
  |  
提交时间:2010/03/08
growth interruption
in segregation
photoluminescence
molecular beam epitaxy
quantum dots
MBE InAs quantum dots grown on metamorphic InGaAs for long wavelength emitting
期刊论文
physica e-low-dimensional systems & nanostructures, 2006, 卷号: 35, 期号: 1, 页码: 194-198
Jiao YH (Jiao Y. H.)
;
Wu J (Wu J.)
;
Xu B (Xu B.)
;
Jin P (Jin P.)
;
Hu LJ (Hu L. J.)
;
Liang LY (Liang L. Y.)
;
Wang ZG (Wang Z. G.)
收藏
  |  
浏览/下载:35/0
  |  
提交时间:2010/04/11
metamorphic
long wavelength
quantum dots
molecular beam epitaxy
MOLECULAR-BEAM EPITAXY
CHEMICAL-VAPOR-DEPOSITION
1.3 MU-M
GAAS
EMISSION
RANGE
ISLANDS
ARRAYS
LASERS
Temperature dependence of surface quantum dots grown under frequent growth interruption
期刊论文
physica e-low-dimensional systems & nanostructures, 2006, 卷号: 33, 期号: 1, 页码: 207-210
作者:
Jin P
;
Xu B
收藏
  |  
浏览/下载:36/0
  |  
提交时间:2010/04/11
growth interruption
in segregation
surface oxide
molecular beam epitaxy
quantum dots
MOLECULAR-BEAM EPITAXY
GAAS
PHOTOLUMINESCENCE
LAYER
SHAPE
SIZE
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