Formation of AsxSb1-x mixing interfaces in InAs/GaSb superlattices grown by metalorganic chemical vapor deposition

	Formation of AsxSb1-x mixing interfaces in InAs/GaSb superlattices grown by metalorganic chemical vapor deposition
	Li, LG ; Liu, SM ; Luo, SA ; Yang, T ; Wang, LJ ; Liu, FQ ; Ye, XL ; Xu, B ; Wang, ZG
刊名	epl
	2012
卷号	97 期号:3 页码:36001
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2013-03-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/23715]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Li, LG,Liu, SM,Luo, SA,et al. Formation of AsxSb1-x mixing interfaces in InAs/GaSb superlattices grown by metalorganic chemical vapor deposition[J]. epl,2012,97(3):36001.
APA	Li, LG.,Liu, SM.,Luo, SA.,Yang, T.,Wang, LJ.,...&Wang, ZG.(2012).Formation of AsxSb1-x mixing interfaces in InAs/GaSb superlattices grown by metalorganic chemical vapor deposition.epl,97(3),36001.
MLA	Li, LG,et al."Formation of AsxSb1-x mixing interfaces in InAs/GaSb superlattices grown by metalorganic chemical vapor deposition".epl 97.3(2012):36001.