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Total Ionizing Dose Response and Annealing Behavior of Bulk nFinFETs With ON-State Bias Irradiation 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 8, 页码: 1503-1510
作者:  Yang, L (Yang, Ling)[ 1,2 ];  Zhang, QZ (Zhang, Qingzhu)[ 1,3 ];  Huang, YB (Huang, Yunbo)[ 1,2 ];  Zheng, ZS (Zheng, Zhongshan)[ 1,2 ];  Li, B (Li, Bo)[ 1,2 ]
收藏  |  浏览/下载:35/0  |  提交时间:2018/09/18
Synergistic effect of total ionizing dose on single event effect induced by pulsed laser microbeam on SiGe heterojunction bipolar transistor 期刊论文
CHINESE PHYSICS B, 2018, 卷号: 27, 期号: 10, 页码: 1-10
作者:  Zhang, JX (Zhang, Jin-Xin)[ 1 ];  Guo, HX (Guo, Hong-Xia)[ 2,3 ];  Pan, XY (Pan, Xiao-Yu)[ 3 ];  Guo, Q (Guo, Qi)[ 2 ];  Zhang, FQ (Zhang, Feng-Qi)[ 3 ]
收藏  |  浏览/下载:38/0  |  提交时间:2018/11/20
Estimation of low-dose-rate degradation on bipolar linear circuits using different accelerated evaluation methods 期刊论文
ACTA PHYSICA SINICA, 2018, 卷号: 67, 期号: 9, 页码: 202-209
作者:  Li, XL (Li Xiao-Long)[ 1,2,3 ];  Lu, W (Lu Wu)[ 1,2 ];  Wang, X (Wang Xin)[ 1,2,3 ];  Guo, Q (Guo Qi)[ 1,2 ];  He, CF (He Cheng-Fa)[ 1,2 ]
收藏  |  浏览/下载:35/0  |  提交时间:2018/09/27
Total ionizing dose effects in pinned photodiode complementary metal-oxide-semiconductor transistor active pixel sensor 期刊论文
CHINESE PHYSICS B, 2018, 卷号: 27, 期号: 10, 页码: 1-5
作者:  Ma, LD (Ma, Lin-Dong)[ 1,2,3 ];  Li, YD (Li, Yu-Dong)[ 1,2 ];  Wen, L (Wen, Lin)[ 1,2 ];  Feng, J (Feng, Jie)[ 1,2 ];  Zhang, X (Zhang, Xiang)[ 1,2,3 ]
收藏  |  浏览/下载:45/0  |  提交时间:2018/11/20
Simulation of Synergism Effect Using Temperature Switching Irradiation on Bipolar Comparator 期刊论文
CHINESE PHYSICS LETTERS, 2018, 卷号: 35, 期号: 8, 页码: 1-4
作者:  Yu, X (Yu, Xin)[ 1,2 ];  Lu, W (Lu, Wu)[ 1,2 ];  Yao, S (Yao, Shuai)[ 1,2,3 ];  Guo, Q (Guo, Qi)[ 1,2 ];  Sun, J (Sun, Jing)[ 1,2 ]
收藏  |  浏览/下载:52/0  |  提交时间:2018/10/19
Effects of proton irradiation on upright metamorphic GaInP/GaInAs/Ge triple junction solar cells 期刊论文
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2018, 卷号: 185, 期号: 10, 页码: 36-44
作者:  Aierken, A (Aierken, A.)[ 1 ];  Fang, L (Fang, L.)[ 2 ];  Heini, M (Heini, M.)[ 1 ];  Zhang, QM (Zhang, Q. M.)[ 2 ];  Li, ZH (Li, Z. H.)[ 1,3 ]
收藏  |  浏览/下载:38/0  |  提交时间:2018/08/07
The Increased Single-Event Upset Sensitivity of 65-nm DICE SRAM Induced by Total Ionizing Dose 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 8, 页码: 1920-1927
作者:  Zheng, QW (Zheng, Qiwen)[ 1 ];  Cui, JW (Cui, Jiangwei)[ 1 ];  Lu, W (Lu, Wu)[ 1 ];  Guo, HX (Guo, Hongxia)[ 1 ];  Liu, J (Liu, Jie)[ 2 ]
收藏  |  浏览/下载:53/0  |  提交时间:2018/09/27


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