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Frequency comb with 100 GHz spacing generated by an asymmetric MQW passively mode-locked laser 期刊论文
OPTICS LETTERS, 2020, 卷号: 45, 期号: 10, 页码: 2760-2763
作者:  Lianping Hou;   Yongguang Huang;   Yihui Liu;   Ruikang Zhang;   Jiankun Wang;   Baojun Wang;   Hongliang Zhu;   Bin Hou;   Bocang Qiu;   John H. Marsh
收藏  |  浏览/下载：39/0  |  提交时间：2021/06/16
Deep Ultraviolet Light Source from Ultrathin GaN/AlN MQW Structures with Output Power Over 2 Watt 期刊论文
Advanced Optical Materials, 2019, 页码: 1801763
作者:  Yixin Wang;   Xin Rong;   Sergey Ivanov;   Valentin Jmerik;   Zhaoying Chen;   Hui Wang;  Tao Wang;   Ping Wang;   Peng Jin;   Yanan Chen;   Vladimir Kozlovsky;   Dmitry Sviridov;  Michail Zverev;   Elena Zhdanova;   Nikita Gamov;   Valentin Studenov;   Hideto Miyake;  Hongwei Li;  Shiping Guo;   Xuelin Yang;   Fujun Xu;   Tongjun Yu;   Zhixin Qin;   Weikun Ge;  Bo Shen;   Xinqiang Wang
收藏  |  浏览/下载：10/0  |  提交时间：2020/08/04
Improvement of slope efficiency of GaN-Based blue laser diodes by using asymmetric MQW and In x Ga 1-x N lower waveguide 期刊论文
Journal of Alloys and Compounds, 2018, 卷号: 731, 页码: 243-247
作者:  Feng Liang;  Degang Zhao;  Desheng Jiang;  Zongshun Liu;  Jianjun Zhu;  Ping Chen;  Jing Yang;  Wei Liu;  Shuangtao Liu;  Yao Xing;  Liqun Zhang;  Wenjie Wang;  Mo Li;  Yuantao Zhang;  Guotong Du
收藏  |  浏览/下载：15/0  |  提交时间：2019/11/19
Electroluminescence property improvement by adjusting quantum wells’ position relative to p-doped region in InGaN/GaN multiple-quantum-well light emitting diodes 期刊论文
AIP Advances, 2017, 卷号: 7, 页码: 035103
作者:  P. Chen;  D. G. Zhao;  D. S. Jiang;  H. Long;  M. Li
收藏  |  浏览/下载：26/0  |  提交时间：2018/07/11
Overshoot effects of electron on efficiency droop in InGaN/GaN MQW light-emitting diodes 期刊论文
aip advances, 2016, 卷号: 6, 期号: 4, 页码: 045219
Yang Huang; Zhiqiang Liu; Xiaoyan Yi; Yao Guo; Shaoteng Wu; Guodong Yuan; JunXi Wang; Guohong Wang; Jinmin Li
收藏  |  浏览/下载：26/0  |  提交时间：2017/03/16
Shockley–Read–Hall recombination and efficiency droop in InGaN/GaN multiple-quantum-well green light-emitting diodes 期刊论文
Journal of Physics D: Applied Physics, 2016, 卷号: 49, 期号: 14, 页码: 145104
Wei Liu; Degang Zhao; Desheng Jiang; Ping Chen; Zongshun Liu; Jianjun Zhu; Xiang Li; Feng Liang; Jianping Liu; Liqun Zhang; Hui Yang; Yuantao Zhang; Guotong Du
收藏  |  浏览/下载：23/0  |  提交时间：2017/03/10
Self-consistent simulation of carrier confinement characteristics in (AlyGa1-yN/AlN)SLs/GaN/(InxGa1-xN/GaN)MQW/GaN heterostructures 期刊论文
journal of alloys and compounds, 2012, 卷号: 523, 页码: 88-93
Ding, JQ; Wang, XL; Xiao, HL; Wang, CM; Yin, HB; Chen, H; Feng, C; Jiang, LJ
收藏  |  浏览/下载：30/0  |  提交时间：2013/02/07
DC Characterizations of MQW Tunnel Diode and Laser Diode Hybrid Integration Device 期刊论文
ieee photonics technology letters, 2012, 卷号: 24, 期号: 16, 页码: 1369-1371
Niu B (Niu, Bin); Li YP (Li, Yanping); Hong T (Hong, Tao); Chen WX (Chen, Weixi); Liang S (Liang, Song); Pan JQ (Pan, Jiaoqing); Qiu JF (Qiu, Jifang); Wang C (Wang, Chong); Ran GZ (Ran, Guangzhao); Zhao LJ (Zhao, Lingjuan); Qin GG (Qin, Guogang); Wang W (Wang, Wei)
收藏  |  浏览/下载：21/0  |  提交时间：2013/04/02
The investigation on carrier distribution in InGaN/GaN multiple quantum well layers 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: article no.93117
作者:  Yang H;  Zhu JH;  Wang H;  Zhang SM;  Yang H
收藏  |  浏览/下载：49/3  |  提交时间：2011/07/05
纳米折叠InGaN/GaN LED材料生长及器件特性 期刊论文
物理学报, 2011, 卷号: 60, 期号: 7, 页码: 076104-1-076104-4
作者:  谭小动;  朱建军;  赵德刚;  张书明
收藏  |  浏览/下载：48/0  |  提交时间：2012/07/17

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