The investigation on carrier distribution in InGaN/GaN multiple quantum well layers

CORC > 半导体研究所 > 中国科学院半导体研究所 > 集成光电子学国家重点实验室

	The investigation on carrier distribution in InGaN/GaN multiple quantum well layers
	Yang H; Zhu JH; Wang H; Zhang SM; Yang H; Zhao DG; Wang H; Zhu JJ; Jiang DS
刊名	journal of applied physics
	2011
卷号	109 期号:9 页码:article no.93117
关键词	DIODES EFFICIENCY
ISSN号	0021-8979
通讯作者	zhang, sm, chinese acad sci, inst semicond, state key lab integrated optoelect, pob 912, beijing 100083, peoples r china. smzhang@red.semi.ac.cn
学科主题	光电子学
收录类别	SCI
资助信息	national science fund for distinguished young scholars [60925017]; national natural science foundation of china [10990100, 60836003]; national basic research program of china [2007cb936700]; national high technology research and development program of china [2007aa03z401]; chinese academy of sciences [iscas2009t05o9s4050000]
语种	英语
公开日期	2011-07-05 ; 2011-07-15
附注	the carrier distribution and recombination dynamics of ingan/gan multiple quantum well (mqw) light-emitting diode structure are investigated. two emission peaks were observed in the low temperature photoluminescence spectra of an ingan/gan mqw structure, but only one peak was observed in the electroluminescence (el) spectra. combined with the spatially resolved cathodoluminescence (cl) measurements, it is found that the electrically injected carrier distribution is governed by hole transport and diffusion in ingan/gan mqw structure due to the much lower mobility of hole. and the electron and hole recombination of el occurs predominantly in the qws that are located closer to the p-gan layer. (c) 2011 american institute of physics. [doi: 10.1063/1.3587176]
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/20949]
专题	半导体研究所_集成光电子学国家重点实验室
推荐引用方式 GB/T 7714	Yang H,Zhu JH,Wang H,et al. The investigation on carrier distribution in InGaN/GaN multiple quantum well layers[J]. journal of applied physics,2011,109(9):article no.93117.
APA	Yang H.,Zhu JH.,Wang H.,Zhang SM.,Yang H.,...&Jiang DS.(2011).The investigation on carrier distribution in InGaN/GaN multiple quantum well layers.journal of applied physics,109(9),article no.93117.
MLA	Yang H,et al."The investigation on carrier distribution in InGaN/GaN multiple quantum well layers".journal of applied physics 109.9(2011):article no.93117.