Overshoot effects of electron on efficiency droop in InGaN/GaN MQW light-emitting diodes

	Overshoot effects of electron on efficiency droop in InGaN/GaN MQW light-emitting diodes
	Yang Huang ; Zhiqiang Liu ; Xiaoyan Yi ; Yao Guo ; Shaoteng Wu ; Guodong Yuan ; JunXi Wang ; Guohong Wang ; Jinmin Li
刊名	aip advances
	2016
卷号	6 期号:4 页码:045219
学科主题	半导体器件
收录类别	SCI
公开日期	2017-03-16
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/28088]
专题	半导体研究所_中科院半导体照明研发中心
推荐引用方式 GB/T 7714	Yang Huang,Zhiqiang Liu,Xiaoyan Yi,et al. Overshoot effects of electron on efficiency droop in InGaN/GaN MQW light-emitting diodes[J]. aip advances,2016,6(4):045219.
APA	Yang Huang.,Zhiqiang Liu.,Xiaoyan Yi.,Yao Guo.,Shaoteng Wu.,...&Jinmin Li.(2016).Overshoot effects of electron on efficiency droop in InGaN/GaN MQW light-emitting diodes.aip advances,6(4),045219.
MLA	Yang Huang,et al."Overshoot effects of electron on efficiency droop in InGaN/GaN MQW light-emitting diodes".aip advances 6.4(2016):045219.