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Investigation of the distribution of deep levels in 4H-SiC epitaxial wafer by DLTS with the method of decussate sampling 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2020, 卷号: 531, 页码: 125352
作者:  Yawei He ;  Guoguo Yan ;   Zhanwei Shen;   Wanshun Zhao ;   Lei Wang ;   Xingfang Liu ;  Guosheng Sun;   Feng Zhang ;   Yiping Zeng
收藏  |  浏览/下载：16/0  |  提交时间：2021/12/20
Influence of electric field on persistent photoconductivity in unintentionally doped n-type GaN 期刊论文
applied physics letters, 2011, 卷号: 98, 期号: 10, 页码: article no.102104
作者:  Deng QW
收藏  |  浏览/下载：47/5  |  提交时间：2011/07/05
Annihilation of deep level defects in inp through high temperature annealing 期刊论文
Journal of physics and chemistry of solids, 2008, 卷号: 69, 期号: 2-3, 页码: 551-554
作者:  Zhao, Y. W.;  Dong, Z. Y.
收藏  |  浏览/下载：20/0  |  提交时间：2019/05/12
Defect  
Native deep level defects in ZnO single crystal grown by CVT method - art. no. 68410I 会议论文
conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007
Zhao, YW; Zhang, F; Zhang, R; Dong, ZY; Wei, XC; Zeng, YP; Li, JM
收藏  |  浏览/下载：43/0  |  提交时间：2010/03/09
Annihilation of deep level defects in InP through high temperature annealing 期刊论文
journal of physics and chemistry of solids, 2008, 卷号: 69, 期号: 39847, 页码: 551-554
Zhao, YW; Dong, ZY
收藏  |  浏览/下载：40/2  |  提交时间：2010/03/08
defect  
磷化铟中铁原子替位与填隙的热致转变及其对材料性质的影响 期刊论文
物理学报, 2007, 卷号: 56, 期号: 9, 页码: 5536-5541
作者:  王博
收藏  |  浏览/下载：9/0  |  提交时间：2010/11/23
Origin of deep level defect related photoluminescence in annealed inp 期刊论文
Journal of applied physics, 2006, 卷号: 100, 期号: 12, 页码: 4
作者:  Zhao, Youwen;  Dong, Zhiyuan;  Miao, Shanshan;  Deng, Aihong;  Yang, Jun
收藏  |  浏览/下载：14/0  |  提交时间：2019/05/12
Development of current-based microscopic defect analysis method using optical filling techniques for the defect study on heavily irradiated high-resistivity si sensors/detectors 期刊论文
Materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 283-287
作者:  Li, Z.;  Li, C. J.
收藏  |  浏览/下载：19/0  |  提交时间：2019/05/12
Development of current-based microscopic defect analysis method using optical filling techniques for the defect study on heavily irradiated high-resistivity Si sensors/detectors 期刊论文
materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 283-287
Li Z (Li Z.); Li CJ (Li C. J.)
收藏  |  浏览/下载：48/0  |  提交时间：2010/04/11
Deep level transient spectroscopy studies of Er and Pr implanted GaN films 期刊论文
acta physica sinica, 2006, 卷号: 55, 期号: 3, 页码: 1407-1412
Song SF; Chen WD; Xu ZJ; Xu XR
收藏  |  浏览/下载：45/0  |  提交时间：2010/04/11

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