Development of current-based microscopic defect analysis method using optical filling techniques for the defect study on heavily irradiated high-resistivity Si sensors/detectors

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Development of current-based microscopic defect analysis method using optical filling techniques for the defect study on heavily irradiated high-resistivity Si sensors/detectors
	Li Z (Li Z.) ; Li CJ (Li C. J.)
刊名	materials science in semiconductor processing
	2006
卷号	9 期号:1-3 页码:283-287
关键词	DLTS defects detectors sensors current transient SILICON DETECTORS
ISSN号	1369-8001
通讯作者	li, z, brookhaven natl lab, upton, ny 11973 usa. e-mail: zhengl@bnl.gov
中文摘要	current-based microscopic defect analysis method such as current deep level transient spectroscopy (i-dlts) and thermally stimulated current have been developed over the years at brookhaven national laboratory (bnl) for the defect characterizations on heavily irradiated (phi(n) >= 10(13) n/cm(2)) high-resistivity (>= 2 k omega cm) si sensors/detectors. the conventional dlts method using a capacitance transient is not valid on heavily irradiated high-resistivity si sensors/detectors. a new optical filling method, using lasers with various wavelengths, has been applied, which is more efficient and suitable than the traditional voltage-pulse filling. optimum defect-filling schemes and conditions have been suggested for heavily irradiated high-resistivity si sensors/detectors. (c) 2006 published by elsevier ltd.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-04-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10540]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Li Z ,Li CJ . Development of current-based microscopic defect analysis method using optical filling techniques for the defect study on heavily irradiated high-resistivity Si sensors/detectors[J]. materials science in semiconductor processing,2006,9(1-3):283-287.
APA	Li Z ,&Li CJ .(2006).Development of current-based microscopic defect analysis method using optical filling techniques for the defect study on heavily irradiated high-resistivity Si sensors/detectors.materials science in semiconductor processing,9(1-3),283-287.
MLA	Li Z ,et al."Development of current-based microscopic defect analysis method using optical filling techniques for the defect study on heavily irradiated high-resistivity Si sensors/detectors".materials science in semiconductor processing 9.1-3(2006):283-287.