已选(0)清除
条数/页: 排序方式:
|
| Atomic Mechanism of Interfacial-Controlled Quantum Efficiency and Charge Migration in InAs/GaSb Superlattice 期刊论文 ACS Applied Materials & Interfaces, 2017, 卷号: 9, 页码: 26642−26647 作者: Han Bi; Xi Han; Lu Liu; Yunhao Zhao; Xuebing Zhao
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:31/0  |  提交时间:2018/06/15 |
| Hole mediated magnetism in Mn-doped GaN nanowires 期刊论文 journal of applied physics, 2011, 卷号: 109, 期号: 7, 页码: article no.74313 作者: Li JB![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:62/4  |  提交时间:2011/07/05
|
| Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching 期刊论文 journal of crystal growth, 2011, 卷号: 314, 期号: 1, 页码: 141-145 作者: Duan RF![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:87/4  |  提交时间:2011/07/05
|
| GaN grown with InGaN as a weakly bonded layer 期刊论文 crystengcomm, 2011, 卷号: 13, 期号: 5, 页码: 1580-1585 作者: Wei HY ; Song HP![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:63/4  |  提交时间:2011/07/05
|
| Epitaxial growth and thermal stability of Ge1-xSnx alloys on Ge-buffered Si(001) substrates 期刊论文 journal of crystal growth, 2011, 卷号: 317, 期号: 1, 页码: 43-46 Su SJ; Wang W; Cheng BW; Zhang GZ; Hu WX; Xue CL; Zuo YH; Wang QM
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:72/4  |  提交时间:2011/07/05
|
| The contributions of composition and strain to the phonon shift in Ge1-xSnx alloys 期刊论文 solid state communications, 2011, 卷号: 151, 期号: 8, 页码: 647-650 Su SJ; Wang W; Cheng BW; Hu WX; Zhang GZ; Xue CL; Zuo YH; Wang QM
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:64/3  |  提交时间:2011/07/05
|
| Epitaxial growth of Ge0.975Sn0.025 alloy films on Si(001) substrates by molecular beam epitaxy 期刊论文 acta physica sinica, 2011, 卷号: 60, 期号: 2, 页码: article no.28101 Su SJ; Wang W; Zhang GZ; Hu WX; Bai AQ; Xue CL; Zuo YH; Cheng BW; Wang QM
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:57/3  |  提交时间:2011/07/05
|
| The growth of ZnO on bcc-In2O3 buffer layers and the valence band offset determined by X-ray photoemission spectroscopy 期刊论文 solid state communications, 2010, 卷号: 150, 期号: 41-42, 页码: 1991-1994 Song HP (Song H. P.); Zheng GL (Zheng G. L.); Yang AL (Yang A. L.); Guo Y (Guo Y.); Wei HY (Wei H. Y.); Li CM (Li C. M.); Yang SY (Yang S. Y.); Liu XL (Liu X. L.); Zhu QS (Zhu Q. S.); Wang ZG (Wang Z. G.)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:17/0  |  提交时间:2010/11/27
|
| Defects in gallium nitride nanowires: First principles calculations 期刊论文 journal of applied physics, 2010, 卷号: 108, 期号: 4, 页码: art. no. 044305 Wang ZG (Wang Zhiguo); Li JB (Li Jingbo); Gao F (Gao Fei); Weber WJ (Weber William J.)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:105/1  |  提交时间:2010/10/11
|
| Cluster scattering in two-dimensional electron gas investigated by Born approximation and partial-wave methods 期刊论文 physica e-low-dimensional systems & nanostructures, 2010, 卷号: 43, 期号: 1, 页码: 543-546 Li ZW; Xu XQ; Wang J; Liu JM; Liu XL; Yang SY; Zhu QS; Wang ZG
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:67/8  |  提交时间:2011/07/05
|