Atomic Mechanism of Interfacial-Controlled Quantum Efficiency and Charge Migration in InAs/GaSb Superlattice

	Atomic Mechanism of Interfacial-Controlled Quantum Efficiency and Charge Migration in InAs/GaSb Superlattice
	Han Bi; Xi Han; Lu Liu; Yunhao Zhao; Xuebing Zhao; Guowei Wang; Yingqiang Xu; Zhichuan Niu; Yi Shi; Renchao Che
刊名	ACS Applied Materials & Interfaces
	2017
卷号	9 页码:26642−26647
学科主题	半导体物理
公开日期	2018-06-15
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/28614]
专题	半导体研究所_半导体超晶格国家重点实验室
推荐引用方式 GB/T 7714	Han Bi,Xi Han,Lu Liu,et al. Atomic Mechanism of Interfacial-Controlled Quantum Efficiency and Charge Migration in InAs/GaSb Superlattice[J]. ACS Applied Materials & Interfaces,2017,9:26642−26647.
APA	Han Bi.,Xi Han.,Lu Liu.,Yunhao Zhao.,Xuebing Zhao.,...&Renchao Che.(2017).Atomic Mechanism of Interfacial-Controlled Quantum Efficiency and Charge Migration in InAs/GaSb Superlattice.ACS Applied Materials & Interfaces,9,26642−26647.
MLA	Han Bi,et al."Atomic Mechanism of Interfacial-Controlled Quantum Efficiency and Charge Migration in InAs/GaSb Superlattice".ACS Applied Materials & Interfaces 9(2017):26642−26647.