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CORC

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The influence of point defects on AlGaN-based deep ultraviolet LEDs 期刊论文
Journal of Alloys and Compounds, 2020, 卷号: 845, 页码: 156177
作者:  Zhanhong Ma ;  Abdulaziz Almalki ;  Xin Yang ;  Xing Wu ;  Xin Xi ;  Jing Li ;  Shan Lin ;  Xiaodong Li ;  Saud Alotaibi ;  Maryam Al huwayz ;  Mohamed Henini ;  Lixia Zhao
收藏  |  浏览/下载：12/0  |  提交时间：2021/05/21
AlGaN-based ultraviolet light-emitting diode on high-temperature annealed sputtered AlN template 期刊论文
Journal of Alloys and Compounds, 2019, 卷号: 794, 页码: 8-12
作者:  Ruxue Ni ;   Chang-Cheng Chuo ;   Kun Yang ;   Yujie Ai ;   Lian Zhang ;   Zhe Cheng ;   Zhe Liu ;   Lifang Jia ;   Yun Zhang
收藏  |  浏览/下载：10/0  |  提交时间：2020/07/31
Deep-ultraviolet stimulated emission from AlGaN/AlN multiple-quantum-wells on nano-patterned AlN/sapphire templates with reduced threshold power density 期刊论文
Journal of Alloys and Compounds, 2017, 卷号: 723, 期号: 06, 页码: 001-200
作者:  Xiang Chen;  Yun Zhang;  Jianchang Yan;  Yanan Guo;  Shuo Zhang
收藏  |  浏览/下载：16/0  |  提交时间：2018/11/30
Effect of GaN buffer polarization on electron distribution of AlGaN/GaN heterostructure 期刊论文
journal of alloys and compounds, 2016, 卷号: 670, 页码: 258-261
Xiaoguang He; Degang Zhao; Wei Liu; Jing Yang; Xiaojing Li; Xiang Li
收藏  |  浏览/下载：11/0  |  提交时间：2017/03/10
Bipolar characteristics of AlGaNAlNGaNAlGaN double heterojunction structure with AlGaN as buffer layer 期刊论文
journal of alloys and compounds, 2013, 卷号: 576, 页码: 48–53
Enchao Peng, Xiaoliang Wang, Hongling Xiao, Cuimei Wang, Haibo Yin, Hong Chen, Chun Feng, Lijuan Jiang, Xun Hou, Zhanguo Wang
收藏  |  浏览/下载：20/0  |  提交时间：2014/03/18
Characteristics of high al content algan grown by pulsed atomic layer epitaxy 期刊论文
Applied surface science, 2011, 卷号: 257, 期号: 20, 页码: 8718-8721
作者:  Pan, Xu;  Wang, Xiaoliang;  Xiao, Hongling;  Wang, Cuimei;  Yang, Cuibai
收藏  |  浏览/下载：173/0  |  提交时间：2019/05/12
Relationship between the growth rate and Al incorporation of AlGaN by metalorganic chemical vapor deposition 期刊论文
journal of alloys and compounds, 2011, 卷号: 509, 期号: 3, 页码: 748-750
作者:  Yang H;  Jiang DS;  Le LC;  Zhang SM;  Wu LL
收藏  |  浏览/下载：46/3  |  提交时间：2011/07/05
Optimized growth of p-type AlGaN electron blocking layer in the GaN-based LED 期刊论文
acta physica sinica, 2011, 卷号: 60, 期号: 1, 页码: article no.16108
Wang B; Li ZC; Yao R; Liang M; Yan FW; Wang GH
收藏  |  浏览/下载：93/5  |  提交时间：2011/07/05
Improved III-nitrides based light-emitting diodes anti-electrostatic discharge capacity with an AlGaN/GaN stack insert layer 期刊论文
ieee international conference on group iv photonics gfp, 2011, 卷号: 32, 期号: 11, 页码: 114007
Li, Zhicong; Li, Panpan; Wang, Bing; Li, Hongjian; Liang, Meng; Yao, Ran; Li, Jing; Deng, Yuanming; Yi, Xiaoyan; Wang, Guohong; Li, Jinmin
收藏  |  浏览/下载：20/0  |  提交时间：2012/06/14
Characteristics of high Al content AlGaN grown by pulsed atomic layer epitaxy 期刊论文
applied surface science, 2011, 卷号: 257, 期号: 20, 页码: 8718-8721
作者:  Jin P
收藏  |  浏览/下载：53/4  |  提交时间：2011/07/07

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