Relationship between the growth rate and Al incorporation of AlGaN by metalorganic chemical vapor deposition

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	Relationship between the growth rate and Al incorporation of AlGaN by metalorganic chemical vapor deposition
	Yang H; Jiang DS; Le LC; Zhang SM; Wu LL; Deng Y; Zhao DG; Zhu JJ; Wang H; Wang H
刊名	journal of alloys and compounds
	2011
卷号	509 期号:3 页码:748-750
关键词	Nitride materials Crystal growth Composition fluctuations X-ray diffraction LAYER
ISSN号	0925-8388
通讯作者	zhao, dg, chinese acad sci, inst semicond, state key lab integrated optoelect, pob 912, beijing 100083, peoples r china. dgzhao@red.semi.ac.cn
学科主题	光电子学
收录类别	SCI
资助信息	national science fund for distinguished young scholars [60925017]; national natural science foundation of china [10990100, 60836003, 60776047]; national basic research program of china [2007cb936700]; national high technology research and development program of china [2007aa032401]; chinese academy of sciences [iscas2009t05o9s4050000]
语种	英语
公开日期	2011-07-05 ; 2011-07-15
附注	the growth rate and its relationship with growth conditions of algan alloy films by metalorganic chemical vapor deposition (mocvd) are investigated. it is found that both parasitic reaction and competitive adsorption play important roles in determining the growth rate and al incorporation in algan. low reactor pressure can weaken parasitic reactions, thus increasing the al composition. in addition, a decrease of absolute amount of ga atoms arriving on the substrate may lead to a lower ga competitive power, and then a higher al content in algan film. (c) 2010 elsevier b.v. all rights reserved.
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/21029]
专题	半导体研究所_集成光电子学国家重点实验室
推荐引用方式 GB/T 7714	Yang H,Jiang DS,Le LC,et al. Relationship between the growth rate and Al incorporation of AlGaN by metalorganic chemical vapor deposition[J]. journal of alloys and compounds,2011,509(3):748-750.
APA	Yang H.,Jiang DS.,Le LC.,Zhang SM.,Wu LL.,...&Yang H.(2011).Relationship between the growth rate and Al incorporation of AlGaN by metalorganic chemical vapor deposition.journal of alloys and compounds,509(3),748-750.
MLA	Yang H,et al."Relationship between the growth rate and Al incorporation of AlGaN by metalorganic chemical vapor deposition".journal of alloys and compounds 509.3(2011):748-750.