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科研机构
华南理工大学 [12]
内容类型
期刊论文 [9]
会议论文 [2]
会议 [1]
发表日期
2016 [2]
2015 [2]
2014 [1]
2013 [2]
2012 [2]
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专题:华南理工大学
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Influence of in content in InGaN barriers on crystalline quality and carrier transport of GaN-based light-emitting diodes (EI收录)
期刊论文
Journal of Physics D: Applied Physics, 2016, 卷号: 49
作者:
Lin, Zhiting[1,2]
;
Wang, Haiyan[1,2]
;
Lin, Yunhao[1,2]
;
Yang, Meijuan[1,2]
;
Wang, Wenliang[1,2]
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2019/04/24
Carrier concentration
Crystalline materials
Diodes
Efficiency
Gallium alloys
Gallium nitride
Quantum efficiency
Semiconducting indium compounds
Semiconductor quantum wells
Effect of post treatment for cu-cr source/drain electrodes on a-igzo tfts (EI收录)
期刊论文
Materials, 2016, 卷号: 9, 页码: 1-5
作者:
Hu, Shiben[1]
;
Fang, Zhiqiang[1]
;
Ning, Honglong[1]
;
Tao, Ruiqiang[1]
;
Liu, Xianzhe[1]
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2019/04/24
Amorphous films
Amorphous semiconductors
Carrier concentration
Copper
Copper alloys
Electrodes
Gallium alloys
Indium
Indium alloys
Interfaces (materials)
Semiconducting indium compounds
Semiconductor materials
Method for Fabricating Amorphous Indium-Zinc-Oxide Thin-Film Transistors With Copper Source and Drain Electrodes (EI收录)
期刊论文
IEEE Electron Device Letters, 2015, 卷号: 36, 页码: 342-344
作者:
Zhao, Mingjie[1]
;
Xu, Miao[2]
;
Ning, Honglong[1]
;
Xu, Ruixia[3]
;
Zou, Jianhua[1]
收藏
  |  
浏览/下载:7/0
  |  
提交时间:2019/04/25
Amorphous films
Copper
Electrodes
Indium
Semiconducting organic compounds
Thin films
Threshold voltage
Transistors
Zinc
Zinc oxide
A high efficient photoluminescence Zn-Cu-In-S/ZnS quantum dots with long lifetime (EI收录SCI收录)
期刊论文
Journal of Alloys and Compounds, 2015, 卷号: 640, 页码: 134-140
作者:
Wang, Xin[1,2]
;
Liang, Zhurong[2,3]
;
Xu, Xueqing[2,3]
;
Wang, Nan[1,2]
;
Fang, Jun[1]
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2019/04/25
Chlorine compounds
Copper
Indium
Indium sulfide
Nanocrystals
Organometallics
Photoluminescence
Quantum theory
Semiconductor quantum dots
Zinc
Zinc sulfide
Instability of indium zinc oxide thin-film transistors under transmission line pulsed stress (EI收录)
期刊论文
IEEE Electron Device Letters, 2014, 卷号: 35, 页码: 1254-1256
作者:
Liu, Yuan[1]
;
Wu, Wei-Jing[2]
;
Lei, Zhi-Feng[1]
;
Wang, Lei[2]
;
Shi, Qian[1]
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/04/25
Electric grounding
Electric lines
Electrostatic devices
Electrostatic discharge
Indium
MOS devices
Semiconducting organic compounds
Single crystals
Spurious signal noise
Thin films
Threshold voltage
Transmission line theory
Zinc
Zinc oxide
Construction of functional macromolecules with well-defined structures by indium-catalyzed three-component polycoupling of alkynes, aldehydes, and amines (EI收录)
期刊论文
Macromolecules, 2013, 卷号: 46, 页码: 3246-3256
作者:
Chan, Carrie Y. K.[1]
;
Tseng, Nai-Wen[1]
;
Lam, Jacky W. Y.[1]
;
Liu, Jianzhao[1]
;
Kwok, Ryan T. K.[1]
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2019/04/25
Catalysis
Chlorine compounds
Cobalt compounds
Magnetic susceptibility
Organometallics
Refractive index
Thin films
Model of VHg incorporation in arsenic-doped HgCdTe: First-principles calculations (EI收录)
期刊论文
Journal of Electronic Materials, 2013, 卷号: 42, 页码: 1010-1016
作者:
Duan, H.[1]
;
Dong, Y.Z.[2]
;
Huang, Y.[3]
;
Chen, X.S.[3]
;
Lu, W.[3]
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2019/04/25
Arsenic
Defects
Electronic properties
Mercury compounds
Semiconducting indium
Zinc oxide nanowire as an electron-extraction layer for broadband polymer photodetectors with an inverted device structure (EI收录SCI收录)
期刊论文
Journal of Physical Chemistry C, 2012, 卷号: 116, 页码: 13650-13653
作者:
Yang, Tingbin[1]
;
Sun, Ke[2]
;
Liu, Xilan[1]
;
Wei, Wei[2]
;
Yu, Tianzhi[1]
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2019/04/26
Buffer layers
Cathodes
Energy gap
Indium compounds
Nanowires
Tin
Tin oxides
Zinc oxide
Low-voltage high-stability indium-zinc oxide thin-film transistor gated by anodized neodymium-doped aluminum (EI收录SCI收录)
期刊论文
IEEE Electron Device Letters, 2012, 卷号: 33, 页码: 827-829
作者:
Lan, Linfeng[1]
;
Zhao, Mingjie[1]
;
Xiong, Nana[1]
;
Xiao, Peng[1]
;
Shi, Wen[1]
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2019/04/26
Indium
Neodymium
Semiconducting organic compounds
Thin film transistors
Transistors
Zinc oxide
High-mobility flexible thin-film transistors with zirconium-doped indium oxide channel layer (EI收录)
会议
Beijing, China,
作者:
Xiao, Peng[1,2]
;
Lan, Linfeng[2]
;
Luo, Dongxiang[3]
;
Peng, Junbiao[2]
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2019/04/11
Computer aided design
Indium
Semiconducting organic compounds
Temperature
Thin film circuits
Thin films
Transistors
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