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浏览/检索结果: 共24条，第1-10条 帮助 限定条件 专题：华南理工大学    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Novel GaN-based nanocomposites: Effective band structure and optical property tuning by tensile strain or external field (EI收录) 期刊论文 Applied Surface Science, 2018, 卷号: 427, 页码: 554-562 作者:  Meng, Ruishen[1];  Sun, Xiang[1];  Jiang, Junke[1];  Liang, Qiuhua[1];  Yang, Qun[2] 收藏  |  浏览/下载：14/0  |  提交时间：2019/04/22 Band structure  Binding energy  Density functional theory  Electric fields  Energy conversion  Energy gap  Gallium nitride  Heterojunctions  Lattice mismatch  Light emitting diodes  Monolayers  Optical properties  Solar energy   Achieving High-Performance Blue GaN-Based Light-Emitting Diodes by Energy Band Modification on AlxInyGa1?x?yN Electron Blocking Layer (EI收录) 期刊论文 IEEE Transactions on Electron Devices, 2017, 卷号: 64, 页码: 472-480 作者:  Lin, Zhiting[1,2];  Wang, Haiyan[1,2];  Chen, Shuqi[1,2];  Lin, Yunhao[1,2];  Yang, Meijuan[1,2] 收藏  |  浏览/下载：4/0  |  提交时间：2019/04/24 Band structure  Band structure  Electric fields  Electric fields  Gallium alloys  Gallium alloys  Gallium nitride  Gallium nitride  Polarization  Polarization   High performance monolithically integrated GaN Driving VMOSFET on LED (EI收录) 期刊论文 IEEE Electron Device Letters, 2017, 卷号: 38, 页码: 752-755 作者:  Lu, Xing[1];  Liu, Chao[2];  Jiang, Huaxing[2];  Zou, Xinbo[2];  Lau, Kei May[2] 收藏  |  浏览/下载：11/0  |  提交时间：2019/04/24 Field effect transistors  Gallium nitride  Integration  Monolithic integrated circuits  MOSFET devices  Semiconductor diodes  Semiconductor junctions  Transistors  Wide band gap semiconductors   Improved efficiency of GaN-based green LED by a nano-micro complex patterned sapphire substrate (EI收录) 期刊论文 IEEE Photonics Technology Letters, 2017, 卷号: 29, 页码: 983-986 作者:  Zhou, Quanbin[1];  Xu, Mingsheng[1];  Li, Qixin[1];  Wang, Hong[1] 收藏  |  浏览/下载：17/0  |  提交时间：2019/04/24 Efficiency  Extraction  Gallium nitride  Inductively coupled plasma  Sapphire   High-luminous efficacy white light-emitting diodes with thin-film flip-chip technology and surface roughening scheme (EI收录) 期刊论文 Journal of Physics D: Applied Physics, 2016, 卷号: 49 作者:  Hu, Xiao-Long[1,2];  Zhang, Jing[1,2];  Wang, Hong[1,2];  Zhang, Xi-Chun[1] 收藏  |  浏览/下载：4/0  |  提交时间：2019/04/24 Diodes  Efficiency  Etching  Flip chip devices  Gallium nitride  Inductively coupled plasma  Light emission  Lighting  Phosphors  Silicones  Thin films   Epitaxial growth of nonpolar GaN films on r-plane sapphire substrates by pulsed laser deposition (EI收录) 期刊论文 Materials Science in Semiconductor Processing, 2016, 卷号: 43, 页码: 82-89 作者:  Yang, Weijia[1];  Wang, Wenliang[1];  Wang, Haiyan[1];  Zhu, Yunnong[1];  Li, Guoqiang[1,2,3] 收藏  |  浏览/下载：4/0  |  提交时间：2019/04/24 Crystalline materials  Curve fitting  Deposition  Epitaxial films  Gallium nitride  Growth temperature  Pulsed laser deposition  Pulsed lasers  Sapphire  Surface roughness   Influence of in content in InGaN barriers on crystalline quality and carrier transport of GaN-based light-emitting diodes (EI收录) 期刊论文 Journal of Physics D: Applied Physics, 2016, 卷号: 49 作者:  Lin, Zhiting[1,2];  Wang, Haiyan[1,2];  Lin, Yunhao[1,2];  Yang, Meijuan[1,2];  Wang, Wenliang[1,2] 收藏  |  浏览/下载：13/0  |  提交时间：2019/04/24 Carrier concentration  Crystalline materials  Diodes  Efficiency  Gallium alloys  Gallium nitride  Quantum efficiency  Semiconducting indium compounds  Semiconductor quantum wells   A comparative study on the properties of c-plane and a-plane GaN epitaxial films grown on sapphire substrates by pulsed laser deposition (EI收录) 期刊论文 Vacuum, 2016, 卷号: 128, 页码: 158-165 作者:  Wang, Wenliang[1,2];  Yang, Weijia[1,2];  Wang, Haiyan[1,2];  Zhu, Yunnong[1,2];  Yang, Meijuan[1,2] 收藏  |  浏览/下载：4/0  |  提交时间：2019/04/24 Crystalline materials  Deposition  Epitaxial films  Full width at half maximum  Gallium alloys  Gallium nitride  Interfaces (materials)  Optical properties  Pulsed laser deposition  Pulsed lasers  Residual stresses  Sapphire  Surface roughness   Effect of residual stress on the microstructure of GaN epitaxial films grown by pulsed laser deposition (EI收录) 期刊论文 Applied Surface Science, 2016, 卷号: 369, 页码: 414-421 作者:  Wang, Haiyan[1,2];  Wang, Wenliang[1,2];  Yang, Weijia[1,2];  Zhu, Yunnong[1,2];  Lin, Zhiting[1,2] 收藏  |  浏览/下载：6/0  |  提交时间：2019/04/24 Atomic force microscopy  Crystalline materials  Deposition  Epitaxial films  Gallium nitride  Microstructure  Pulsed laser deposition  Pulsed lasers  Surface roughness   Performance of InGaN-based thin-film LEDs with flip-chip configuration and concavely patterned surface fabricated on electroplating metallic substrate (EI收录) 期刊论文 IEEE Photonics Journal, 2016, 卷号: 8 作者:  Hu, Xiao-Long[1];  Qi, Zhao-Yi[1];  Wang, Hong[1];  Zhang, Xi-Chun[1] 收藏  |  浏览/下载：4/0  |  提交时间：2019/04/24 Electrodes  Electroplating  Fabrication  Flip chip devices  Gallium nitride  Light emitting diodes  Sapphire  Substrates