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科研机构
西安交通大学 [12]
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期刊论文 [8]
会议论文 [4]
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2019 [1]
2018 [6]
2017 [1]
2016 [2]
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专题:西安交通大学
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Impact of TID on latch up induced by pulsed irradiation in CMOS circuits
期刊论文
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 2019, 卷号: 440, 页码: 95-100
作者:
Li, Ruibin
;
He, Chaohui
;
Chen, Wei
;
Li, Junlin
;
Wang, Chenhui
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/11/19
Base recombination currents
Dose rate
Latch-ups
Oxide trapped charge
Pulsed irradiation
Shallow trench isolation
Surface recombinations
Total Ionizing Dose
The total ionizing dose effect on SiO2 and new high-k gate dielectrics under gamma-ray irradiation
会议论文
作者:
Ding, Man
;
Cheng, Yonghong
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2019/11/19
Equivalent oxide thickness
Gamma irradiation
Gamma-ray irradiation
Interface trapped charges
Silicon dangling bond
Thermally oxidized
Total ionizing dose effects
Trapping efficiencies
Total-Ionizing-Dose Effects on a Graphene X-Ray Detector Laser-Scribed From Graphene Oxide
期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 页码: 473-477
作者:
Deng, Ning-Qin
;
Liao, Wen-Jun
;
Hu, Jing
;
Wang, Peng
;
Xu, Meng-Xuan
收藏
  |  
浏览/下载:8/0
  |  
提交时间:2019/11/19
Graphene
total-ionizing dose
X-ray detector
Total Ionizing Dose Effects of SiGe HBTs Induced by Co-60 Gamma-Ray Irradiation
期刊论文
NUCLEAR SCIENCE AND ENGINEERING, 2018, 卷号: 191, 页码: 98-103
作者:
Liu, Shu-Huan
;
Hussain, Aqil
;
Li, Da
;
Guo, Xiaoqiang
;
Li, Zhuo-Qi
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2019/11/19
SiGe HBTs
Co-60 gamma radiation
radiation effects
An Effective Method to Compensate Total Ionizing Dose-Induced Degradation on Double-SOI Structure
会议论文
作者:
Huang, Yang
;
Li, Binhong
;
Zhao, Xing
;
Zheng, Zhongshan
;
Gao, Jiantou
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2019/11/26
Coupling effect
double SOI (DSOI)
negative back-gate bias
total ionizing dose (TID)
Threshold voltage model of total ionizing irradiated short-channel FD-SOI MOSFETs with Gaussian doping profile
期刊论文
IEEE Transactions on Nuclear Science, 2018, 卷号: 65, 页码: 2679-2690
作者:
Huang, Huixiang
;
Wei, Sufen
;
Pan, Jinyan
;
Xu, Wenbin
;
Chen, Chi-Cheng
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2019/11/26
Gaussians
Integrated circuit modeling
Interface traps
MOS-FET
Short-channel effect
Silicon on insulator (SOI)
Threshold voltage modeling
Total dose radiation
Co-60 gamma radiation total ionizing dose combined with conducted electromagnetic interference studies in BJTs
期刊论文
MICROELECTRONICS RELIABILITY, 2018, 卷号: 82, 页码: 159-164
作者:
Lawal, Olarewaju Mubashiru
;
Liu, Shuhuan
;
Li, Zhuoqi
;
Hussai, Aqil
收藏
  |  
浏览/下载:1/0
  |  
提交时间:2019/11/26
Co-60 gamma
Current gain degradation
Bipolar transistor
EMI
Ideality factor
TID
Total Ionizing Dose Response of Hafnium-Oxide Based MOS Devices to Low-Dose-Rate Gamma Ray Radiation Observed by Pulse CV and On-Site Measurements
期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2017, 卷号: 64, 页码: 673-682
作者:
Mu, Yifei
;
Zhao, Ce Zhou
;
Lu, Qifeng
;
Zhao, Chun
;
Qi, Yanfei
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/11/26
gamma irradiation
ALD
hafnium oxide
low-dose-rate
oxide trapped charges
pulse CV
Synergistic effect of mixed neutron and gamma irradiation in bipolar operational amplifier OP07
会议论文
作者:
Liu Yan
;
Chen Wei
;
Yang Shanchao
;
Jin Xiaoming
;
He Chaohui
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2019/12/02
Neutron displacement effect
Bipolar device
Operational amplifier
Total ionizing dose effect
Synergistic effect
Impact of Bias Conditions on Total Ionizing Dose Effects of Co-60 gamma in SiGe HBT
期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2016, 卷号: 63, 期号: [db:dc_citation_issue], 页码: 1251-1258
作者:
Zhang, Jinxin
;
Guo, Qi
;
Guo, Hongxia
;
Lu, Wu
;
He, Chaohui
收藏
  |  
浏览/下载:1/0
  |  
提交时间:2019/12/02
total ionizing dose effect
SiGe HBT
Co-60 gamma irradiation
Bias conditions
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