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An Analytical Subthreshold Swing Model for fully-depleted MOSFETs with vertical Gaussian profile fabricated on modified silicon-on-insulator wafers 期刊论文
Microsystem Technologies, 2018
作者:  Huang, Huixiang;  Wei, Sufen;  Pan, Jinyan;  Xu, Wenbin;  Mei, Qiang
收藏  |  浏览/下载：6/0  |  提交时间：2019/11/19
Low-Noise High-Linearity 56Gb/s PAM-4 Optical Receiver in 45nm SOI CMOS 会议论文
作者:  Xie, Yang;  Li, Dan;  Liu, Yiqun;  Liu, Ming;  Zhang, Yihua
收藏  |  浏览/下载：7/0  |  提交时间：2019/11/19
Modeling the threshold voltage variation induced by channel random dopant fluctuation in fully depleted silicon-on-insulator MOSFETs 期刊论文
JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 卷号: 57
作者:  Zhang, Guohe;  Yang, Jiangjiang;  Jiang, Peilin;  Bu, Jianhui;  Li, Binhong
收藏  |  浏览/下载：2/0  |  提交时间：2019/11/19
Analysis of a high-performance ultra-thin body ultra-thin box silicon-on-insulator MOSFET with the lateral dual-gates: featuring the suppression of the DIBL 会议论文
作者:  Wei, Sufen;  Zhang, Guohe;  Shao, Zhibiao;  Geng, Li;  Yang, Cheng-Fu
收藏  |  浏览/下载：8/0  |  提交时间：2019/11/26
Threshold voltage model of total ionizing irradiated short-channel FD-SOI MOSFETs with Gaussian doping profile 期刊论文
IEEE Transactions on Nuclear Science, 2018, 卷号: 65, 页码: 2679-2690
作者:  Huang, Huixiang;  Wei, Sufen;  Pan, Jinyan;  Xu, Wenbin;  Chen, Chi-Cheng
收藏  |  浏览/下载：6/0  |  提交时间：2019/11/26
Research of a Novel Ultra-High Pressure Sensor with High-Temperature Resistance 期刊论文
MICROMACHINES, 2018, 卷号: 9
作者:  Zhang, Guo-Dong;  Zhao, Yu-Long;  Zhao, Yun;  Wang, Xin-Chen;  Wei, Xue-Yong
收藏  |  浏览/下载：8/0  |  提交时间：2019/11/26
Modeling a Si homojunction SOI-Tunnel FET with configurable voltage difference on gates 会议论文
作者:  Wei, Sufen;  Zhang, Guohe;  Liu, Jing;  Huang, Huixiang;  Geng, Li
收藏  |  浏览/下载：13/0  |  提交时间：2019/11/26
Enhanced Radiation Hardness in SOI MOSFET With Embedded Tunnel Diode Layer 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2017, 卷号: 64, 页码: 2369-2376
作者:  Huang, Huixiang;  Wei, Sufen;  Tang, Kai;  Pan, Jinyan;  Xu, Wenbin
收藏  |  浏览/下载：11/0  |  提交时间：2019/11/26
A compact subthreshold swing model of ultra-Thin body ultra-Thin box SOI MOSFETs with Gaussian doping profile 会议论文
作者:  Wei, Sufen;  Zhang, Guohe;  Liu, Jing;  Huang, Huixiang;  Geng, Li
收藏  |  浏览/下载：7/0  |  提交时间：2019/11/26
Analytic modeling of potential and threshold voltage for short-channel thin-body fully depleted silicon-on-insulator MOSFETs with a vertical Gaussian doping profile 期刊论文
JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 卷号: 55, 期号: [db:dc_citation_issue]
作者:  Wei, Sufen;  Zhang, Guohe;  Shao, Zhibiao;  Huang, Huixiang;  Geng, Li
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/02

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