| Modeling a Si homojunction SOI-Tunnel FET with configurable voltage difference on gates | |
| Wei, Sufen; Zhang, Guohe; Liu, Jing; Huang, Huixiang; Geng, Li; Shao, Zhibiao; Yang, Cheng-Fu | |
| 2017 | |
| 关键词 | Band to band tunneling Channel region N type silicon Potential barriers Silicon on insulator (SOI) Technology computer aided design Tunnel FET (TFET) Voltage difference |
| 页码 | 1297-1299 |
| 会议录 | Proceedings of the 2017 IEEE International Conference on Applied System Innovation: Applied System Innovation for Modern Technology, ICASI 2017
 |
| URL标识 | 查看原文 |
| ISSN号 | 9781509048977 |
| 内容类型 | 会议论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/2924284 |
| 专题 | 西安交通大学 |
| 推荐引用方式 GB/T 7714 | Wei, Sufen,Zhang, Guohe,Liu, Jing,et al. Modeling a Si homojunction SOI-Tunnel FET with configurable voltage difference on gates[C]. 见:. |
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