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浏览/检索结果: 共10条，第1-10条 帮助 限定条件 专题：北京大学    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Oxygen Interstitial Creation in a-IGZO Thin-Film Transistors Under Positive Gate-Bias Stress 期刊论文 IEEE ELECTRON DEVICE LETTERS, 2017 Zhou, Xiaoliang; Shao, Yang; Zhang, Letao; Lu, Huiling; He, Hongyu; Han, Dedong; Wang, Yi; Zhang, Shengdong 收藏  |  浏览/下载：7/0  |  提交时间：2017/12/03 Amorphous oxide semiconductor  thin-film transistors  reliability  positive gate-bias stress  defect creation   Source-drain resistance characteristics of back-channel etched amorphous InGaZnO thin film transistors with TiO2:Nb protective layer 期刊论文 MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2017 Zhang, Letao; Zhou, Xiaoliang; Chang, Baozhu; Wang, Longyan; Xiao, Yuxiang; He, Hongyu; Zhang, Shengdong 收藏  |  浏览/下载：7/0  |  提交时间：2017/12/03 Amorphous indium gallium zinc oxide  Thin film transistors  Source-drain parasitic resistance  TiO2:Nb  Films thickness  THRESHOLD VOLTAGE  ANATASE TIO2  PERFORMANCE  SHIFT  TFTS   Investigating degradation behaviors induced by mobile Cu ions under high temperature negative bias stress in a-InGaZnO thin film transistors 期刊论文 APPLIED PHYSICS LETTERS, 2017 Chiang, Hsiao-Cheng; Chang, Ting-Chang; Liao, Po-Yung; Chen, Bo-Wei; Tsao, Yu-Ching; Tsai, Tsung-Ming; Chien, Yu-Chieh; Yang, Yi-Chieh; Chen, Kuan-Fu; Yang, Chung-I; Hung, Yu-Ju; Chang, Kuan-Chang; Zhang, Sheng-Dong; Lin, Sung-Chun; Yeh, Cheng-Yen 收藏  |  浏览/下载：6/0  |  提交时间：2017/12/03 IGZO TFTS  ZNO-CU  SEMICONDUCTORS  TRANSITIONS  IMPURITIES  OXIDE  SHIFT   Oxygen Adsorption Effect of Amorphous InGaZnO Thin-Film Transistors 期刊论文 IEEE ELECTRON DEVICE LETTERS, 2017 Zhou, Xiaoliang; Shao, Yang; Zhang, Letao; Xiao, Xiang; Han, Dedong; Wang, Yi; Zhang, Shengdong 收藏  |  浏览/下载：2/0  |  提交时间：2017/12/03 Amorphous oxide semiconductor  thinfilm transistors  oxygen adsorption  surface-state model  OXIDE  ZNO  WATER   Nb Doped TiO2 Protected Back-Channel-Etched Amorphous InGaZnO Thin Film Transistors 期刊论文 IEEE ELECTRON DEVICE LETTERS, 2017 Zhang, Letao; Zhou, Xiaoliang; Yang, Huan; He, Hongyu; Wang, Longyan; Zhang, Min; Zhang, Shengdong 收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03 Amorphous indium gallium zinc oxide (a-IGZO)  thin film transistors (TFTs)  back-channel-etch (BCE) process  Nb doped TiO2  THRESHOLD VOLTAGE  CARBON-NANOFILM  BARRIER LAYER  PERFORMANCE  SHIFT   A Back-Channel-Etched Amorphous InGaZnO Thin-Film Transistor Technology With Al-Doped ZnO as Source/Drain and Pixel Electrodes 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016 Deng, Wei; Xiao, Xiang; Shao, Yang; Song, Zhen; Lee, Chia-Yu; Lien, Alan; Zhang, Shengdong 收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03 Aluminum-doped ZnO (AZO)  amorphous indium-gallium-zinc oxide (a-IGZO)  back-channel-etch (BCE)  pixel electrode (PE)  thin-film transistor (TFT)  wet etch  THRESHOLD VOLTAGE  PERFORMANCE  DAMAGE  LAYER  TFTS  SIO2   1/f Noise Expressions for Amorphous InGaZnO TFTs Considering Mobility Power-Law Parameter in Above-Threshold Regime 期刊论文 ieee electron device letters, 2015 He, Hongyu; Zheng, Xueren; Zhang, Shengdong 收藏  |  浏览/下载：5/0  |  提交时间：2015/11/10 Thin-film transistor (TFT)  InGaZnO (IGZO)  low frequency noise  carrier mobility  THIN-FILM TRANSISTORS  LOW-FREQUENCY NOISE   Above-Threshold 1/f Noise Expression for Amorphous InGaZnO Thin-Film Transistors Considering Series Resistance Noise 期刊论文 IEEE ELECTRON DEVICE LETTERS, 2015 He, Hongyu; Zheng, Xueren; Zhang, Shengdong 收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03 Thin-film transistor (TFT)  InGaZnO (IGZO)  low frequency noise  series resistance noise  LOW-FREQUENCY NOISE   Charge Trapping Model for Temporal Threshold Voltage Shift in a-IGZO TFTs Considering Variations of Carrier Density in Channel and Electric Field in Gate Insulator 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015 Wang, Lisa Ling; He, Hongyu; Liu, Xiang; Deng, Wei; Zhang, Shengdong 收藏  |  浏览/下载：2/0  |  提交时间：2017/12/03 Channel carrier density  oxide electric field  thin-film transistors (TFTs)  threshold voltage shift  THIN-FILM TRANSISTORS  BIAS-STRESS  CONDUCTION  INSTABILITIES   Low-Voltage a-InGaZnO Thin-Film Transistors With Anodized Thin HfO2 Gate Dielectric 期刊论文 IEEE ELECTRON DEVICE LETTERS, 2015 Shao, Yang; Xiao, Xiang; He, Xin; Deng, Wei; Zhang, Shengdong 收藏  |  浏览/下载：5/0  |  提交时间：2017/12/03 Amorphous indium-gallium-zinc oxide (a-IGZO)  anodized HfO2  high-k  low voltage  thin-film transistors (TFTs)  OXIDE  TEMPERATURE  ALUMINUM