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Partially Crystallized Ultrathin Interfaces between GaN and SiNx Grown by Low-Pressure Chemical Vapor Deposition and Interface Editing 期刊论文
ACS APPLIED MATERIALS & INTERFACES, 2021, 卷号: 13
作者:  Wang, Xinhua;  Zhang, Yange;  Huang, Sen;  Yin, Haibo;  Fan, Jie
收藏  |  浏览/下载：66/0  |  提交时间：2021/04/26
Deposition Temperature and Heat Treatment on Silicon Nitride Coating Deposited by LPCVD 期刊论文
JOURNAL OF INORGANIC MATERIALS, 2019, 卷号: 34, 期号: 11, 页码: 1231
作者:  Liao Chun-Jing;  Dong Shao-Ming;  Jin Xi-Hai;  Hu Jian-Bao;  Zhang Xiang-Yu
收藏  |  浏览/下载：105/0  |  提交时间：2019/12/26
基于MEMS的原位液体TEM芯片的设计与制作 期刊论文
微纳电子技术, 2018
作者:  焦磊涛;  欧文;  蒋文静
收藏  |  浏览/下载：29/0  |  提交时间：2019/04/25
A comparative study of graphene growth by APCVD, LPCVD and PECVD 期刊论文
MATERIALS RESEARCH EXPRESS, 2018
作者:  Saleem, Muhammad;  Azhar, Muhammad;  Naseem, Shahzad;  Li, Qi(李奇);  Riaz, Saira
收藏  |  浏览/下载：61/0  |  提交时间：2019/03/27
AlGaN/GaN MIS-HEMTs of Very-Low Vth Hysteresis and Current Collapse With In-Situ Pre-Deposition Plasma Nitridation and LPCVD-Si3N4 Gate Insulator 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2017
作者:  Zhang, Zhili（张志利）;  Li, Weiyi;  Fu, Kai（付凯）;  Yu, Guohao（于国浩）;  Zhang, Xiaodong（张晓东）
收藏  |  浏览/下载：33/0  |  提交时间：2018/02/05
Fast Growth and Broad Applications of 25-Inch Uniform Graphene Glass 期刊论文
ADVANCED MATERIALS, 2017
Chen, Xu-Dong; Chen, Zhaolong; Jiang, Wen-Shuai; Zhang, Cuihong; Sun, Jingyu; Wang, Huihui; Xin, Wei; Lin, Li; Priydarshi, Manish K.; Yang, Huai; Liu, Zhi-Bo; Tian, Jian-Guo; Zhang, Yingying; Zhang, Yanfeng; Liu, Zhongfan
收藏  |  浏览/下载：8/0  |  提交时间：2017/12/03
Study of Interface Traps in AlGaN/GaN MISHEMTs Using LPCVD SiNx as Gate Dielectric 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 卷号: 64, 页码: 824-831
作者:  Lu, Xing;  Yu, Kun;  Jiang, Huaxing;  Zhang, Anping;  Lau, Kei May
收藏  |  浏览/下载：6/0  |  提交时间：2019/11/26
High Uniformity Normally-OFF GaN MIS-HEMTs Fabricated on Ultra-Thin-Barrier AlGaN/GaN Heterostructure 期刊论文
IEEE Electron Device Letters, 2016
作者:  Liu XY(刘新宇);  Huang S(黄森);  Wang XH(王鑫华)
收藏  |  浏览/下载：8/0  |  提交时间：2017/05/08
Effect of interface and bulk traps on the C–V characterization of a LPCVD-SiNx/AlGaN/GaN metal-insulator-semiconductor structure 期刊论文
Semiconductor Science and Technology, 2016
作者:  Huang S(黄森);  Wang XH(王鑫华)
收藏  |  浏览/下载：9/0  |  提交时间：2017/05/08
Investigation of the interface between LPCVD-SiNx gate dielectric and III-nitride for AlGaN/GaN MIS-HEMTs 期刊论文
Journal of Vacuum Science & Technology B, 2016
作者:  Wang XH(王鑫华)
收藏  |  浏览/下载：11/0  |  提交时间：2017/05/08

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