Partially Crystallized Ultrathin Interfaces between GaN and SiNx Grown by Low-Pressure Chemical Vapor Deposition and Interface Editing

doi:10.1021/acsami.0c19483

	Partially Crystallized Ultrathin Interfaces between GaN and SiNx Grown by Low-Pressure Chemical Vapor Deposition and Interface Editing
	Wang, Xinhua 3,4; Zhang, Yange 1; Huang, Sen 3,4; Yin, Haibo 3; Fan, Jie 3; Wei, Ke 3; Zheng, Yingkui 3; Wang, Wenwu 2; Jiang, Haojie 2; Wu, Xuebang 1
刊名	ACS APPLIED MATERIALS & INTERFACES
	2021-02-17
卷号	13
关键词	GaN first-principles formation mechanism of crystallized Si2N2O interface editing LPCVD-SiNx near-conduction band states
ISSN号	1944-8244
DOI	10.1021/acsami.0c19483
通讯作者	Huang, Sen(huangsen@ime.ac.cn) ; Liu, Xinyu(xyliu@ime.ac.cn)
英文摘要	The formation mechanism of the partially crystallized ultrathin layer at the interface between GaN and SiNx grown by low-pressure chemical vapor deposition was analyzed based on the chemical components of reactants and products detected by high-resolution sputter depth profile analysis by X-ray photoelectron spectroscopy. A reasonable mass action equation for the formation of Si2N2O was proposed from the feasibility analysis of the Gibbs free energy changes of the reaction. The high-energyactivated Ga2O on the surface likely assists in the synthesis of the crystallized components. A well-defined 1ML theta-Ga2O3 transition interface was inserted into Si2N2O/GaN pure interface supercell slabs to edit the unsaturated state of the bonds. Low-density states can be achieved when the effective charges of the unsaturated atoms are adjusted to a certain interval.
资助项目	National Natural Science Foundation of China[61527816] ; National Natural Science Foundation of China[61534007] ; National Natural Science Foundation of China[61822407] ; National Natural Science Foundation of China[11634002] ; National Natural Science Foundation of China[61631021] ; Chinese Academy of Science (CAS)[QYZDB-SSW-JSC012] ; National Key R&D Program of China[2016YFB0400105] ; National Key R&D Program of China[2017YFB0403000] ; Youth Innovation Promotion Association of CAS ; University of Chinese Academy of Sciences ; Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics of the Chinese Academy of Sciences
WOS研究方向	Science & Technology - Other Topics ; Materials Science
语种	英语
出版者	AMER CHEMICAL SOC
WOS记录号	WOS:000621051200074
资助机构	National Natural Science Foundation of China ; Chinese Academy of Science (CAS) ; National Key R&D Program of China ; Youth Innovation Promotion Association of CAS ; University of Chinese Academy of Sciences ; Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics of the Chinese Academy of Sciences
内容类型	期刊论文
源URL	[http://ir.hfcas.ac.cn:8080/handle/334002/120883]
专题	中国科学院合肥物质科学研究院
通讯作者	Huang, Sen; Liu, Xinyu
作者单位	1.Chinese Acad Sci, Inst Solid State Phys, Hefei 230031, Peoples R China 2.Chinese Acad Sci, Integrated Circuit Adv Proc Ctr, Inst Microelect, Beijing 100029, Peoples R China 3.Chinese Acad Sci, High Frequency High Voltage Device & Integrated C, Inst Microelect, Beijing 100029, Peoples R China 4.Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China
推荐引用方式 GB/T 7714	Wang, Xinhua,Zhang, Yange,Huang, Sen,et al. Partially Crystallized Ultrathin Interfaces between GaN and SiNx Grown by Low-Pressure Chemical Vapor Deposition and Interface Editing[J]. ACS APPLIED MATERIALS & INTERFACES,2021,13.
APA	Wang, Xinhua.,Zhang, Yange.,Huang, Sen.,Yin, Haibo.,Fan, Jie.,...&Liu, Xinyu.(2021).Partially Crystallized Ultrathin Interfaces between GaN and SiNx Grown by Low-Pressure Chemical Vapor Deposition and Interface Editing.ACS APPLIED MATERIALS & INTERFACES,13.
MLA	Wang, Xinhua,et al."Partially Crystallized Ultrathin Interfaces between GaN and SiNx Grown by Low-Pressure Chemical Vapor Deposition and Interface Editing".ACS APPLIED MATERIALS & INTERFACES 13(2021).