AlGaN/GaN MIS-HEMTs of Very-Low Vth Hysteresis and Current Collapse With In-Situ Pre-Deposition Plasma Nitridation and LPCVD-Si3N4 Gate Insulator

	AlGaN/GaN MIS-HEMTs of Very-Low Vth Hysteresis and Current Collapse With In-Situ Pre-Deposition Plasma Nitridation and LPCVD-Si3N4 Gate Insulator
	Zhang, Zhili（张志利）; Li, Weiyi; Fu, Kai（付凯）; Yu, Guohao（于国浩）; Zhang, Xiaodong（张晓东）; Zhao, Yanfei; Sun, Shichuang; Song, Liang; Deng, Xuguang; Xing, Zheng（行政）
刊名	IEEE ELECTRON DEVICE LETTERS
	2017
语种	英语
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/5293]
专题	苏州纳米技术与纳米仿生研究所_纳米加工公共平台
推荐引用方式 GB/T 7714	Zhang, Zhili,Li, Weiyi,Fu, Kai,et al. AlGaN/GaN MIS-HEMTs of Very-Low Vth Hysteresis and Current Collapse With In-Situ Pre-Deposition Plasma Nitridation and LPCVD-Si3N4 Gate Insulator[J]. IEEE ELECTRON DEVICE LETTERS,2017.
APA	Zhang, Zhili.,Li, Weiyi.,Fu, Kai.,Yu, Guohao.,Zhang, Xiaodong.,...&Zhang, Baoshun.(2017).AlGaN/GaN MIS-HEMTs of Very-Low Vth Hysteresis and Current Collapse With In-Situ Pre-Deposition Plasma Nitridation and LPCVD-Si3N4 Gate Insulator.IEEE ELECTRON DEVICE LETTERS.
MLA	Zhang, Zhili,et al."AlGaN/GaN MIS-HEMTs of Very-Low Vth Hysteresis and Current Collapse With In-Situ Pre-Deposition Plasma Nitridation and LPCVD-Si3N4 Gate Insulator".IEEE ELECTRON DEVICE LETTERS (2017).