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Simulation study on single-event burnout in field-plated Ga2O3 MOSFETs 期刊论文
MICROELECTRONICS RELIABILITY, 2023, 卷号: 149
作者:  Yu, Cheng-hao;  Guo, Hao-min;  Liu, Yan;  Wu, Xiao-dong;  Zhang, Li-long
收藏  |  浏览/下载：11/0  |  提交时间：2023/11/10
Insight Into Gate-Induced Drain Leakage in Silicon Nanowire Transistors 期刊论文
ieee电子器件汇刊, 2015
Fan, Jiewen; Li, Ming; Xu, Xiaoyan; Yang, Yuancheng; Xuan, Haoran; Huang, Ru
收藏  |  浏览/下载：2/0  |  提交时间：2015/11/10
Carbon Nanotube Feedback-Gate Field-Effect Transistor: Suppressing Current Leakage and Increasing On/Off Ratio 期刊论文
acs nano, 2015
Qiu, Chenguang; Zhang, Zhiyong; Zhong, Donglai; Si, Jia; Yang, Yingjun; Peng, Lan-Mao
收藏  |  浏览/下载：2/0  |  提交时间：2015/11/11
Effects of heavy ion irradiation on ultra-deep-submicron partially-depleted SOI devices 期刊论文
半导体学报（英文版）, 2015
Wu Weikang; An Xia; Tan Fei; Feng Hui; Chen Yehua; Liu Jingjing; Zhang Xing
收藏  |  浏览/下载：3/0  |  提交时间：2017/12/03
Heavy ion induced electrical property degradation in sub-100 nm bulk silicon MOS devices 期刊论文
半导体学报（英文版）, 2015
Chen Yehua; An Xia; Wu Weikang; Zhang Yao; Liu Jingjing; Zhang Xing; Huang Ru
收藏  |  浏览/下载：2/0  |  提交时间：2017/12/03
Comparative study of silicon nanowire transistors with triangular-shaped cross sections 期刊论文
JAPANESE JOURNAL OF APPLIED PHYSICS, 2015
Zhang, Yi-Bo; Sun, Lei; Xu, Hao; Han, Jing-Wen; Wang, Yi; Zhang, Sheng-Dong
收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03
Impact of random discrete dopant in extension induced fluctuation in gate-source/drain underlap FinFET 期刊论文
日本应用物理学杂志, 2014
Wang, Yijiao; Huang, Peng; Xin, Zheng; Zeng, Lang; Liu, Xiaoyan; Du, Gang; Kang, Jinfeng
收藏  |  浏览/下载：1/0  |  提交时间：2015/11/10
Analysis of AlGaN/GaN high electron mobility transistors failure mechanism under semi-on DC stress 期刊论文
journal of semiconductors, 2014
Yang, Zhen; Wang, Jinyan; Xu, Zhe; Li, Xiaoping; Zhang, Bo; Wang, Maojun; Yu, Min; Zhang, Jincheng; Ma, Xiaohua; Li, Yongbing
收藏  |  浏览/下载：7/0  |  提交时间：2015/11/10
Total ionizing dose (TID) effect and single event effect (SEE) in quasi-SOI nMOSFETs 期刊论文
semiconductor science and technology, 2014
Tan, Fei; Huang, Ru; An, Xia; Wu, Weikang; Feng, Hui; Huang, Liangxi; Fan, Jiewen; Zhang, Xing; Wang, Yangyuan
收藏  |  浏览/下载：5/0  |  提交时间：2015/11/13
Total ionizing dose effect on 0.18 mu m narrow-channel NMOS transistors 期刊论文
ACTA PHYSICA SINICA, 2013, 卷号: 62, 期号: 13
作者:  Wu Xue;  Lu Wu;  Wang Xin;  Xi Shan-Bin;  Guo Qi
收藏  |  浏览/下载：24/0  |  提交时间：2013/11/07

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