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Single-Event-Effects Induced by Heavy Ion and Pulsed Laser on 16Mb Magneto-resistive Random Access Memory
会议论文
作者:
Zhang HH(张浩浩)
;
Bi JS(毕津顺)
;
Xi K(习凯)
;
Li J(李金)
;
Ji LL(季兰龙)
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2018/07/26
The Heavy Ion Radiation effects on the Pt/HfO2/Ti Resistive Switching Memory
会议论文
作者:
Wang, Yan
;
Li, Yang
;
Liu, Qi
;
Bi, Jinshun
;
Liu, Jing
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2019/03/27
resistive random access memory (RRAM)
heavy ion
radiation
electrical performance
Bipolar Resistive Switching in Al/GO-PEDOT:PSS/Pt Memory Devices
会议论文
作者:
Chao, Hong
;
Yuan, Fang-Yuan
;
Wu, Huaqiang
;
Deng, Ning
;
Wang, Chongjie
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/11/21
PEDOT:PSS
bipolar
graphene oxide
resistive random-access memory
Graphene Oxide and TiO2 Nano-particle Composite Based Nonvolatile Memory
会议论文
作者:
Chao, Hong
;
Yuan, Fang-Yuan
;
Wu, Huaqiang
;
Deng, Ning
;
Yu, Zhong-Zhen
收藏
  |  
浏览/下载:9/0
  |  
提交时间:2019/11/21
bipolar
graphene oxide
TiO2 nano-particles
resistive random-access memory
Novel self-compliance Bipolar 1D1R memory device for high-density RRAM application
会议论文
2013 5th IEEE International Memory Workshop, IMW 2013, Monterey, CA, United states, May 26, 2013 - May 29, 2013
作者:
Li, Y.T.
;
Long, S.B.
;
Lv, H.B.
;
Liu, Q.
;
Wang, M.
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2017/01/20
Random access storage
Schottky barrier diodes
Switching systems
1D1R
Combined tio
Non-volatile memory application
Resistive switching
Reverse bias
RRAM
Schottky diodes
TiO
Effects of Oxygen Partial Pressure on the Sputtered Hafnium Oxide Thin Films for Resistive Random-Access Memory
会议论文
作者:
Xie, Zhongliang
;
Lai, Yunfeng
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  |  
浏览/下载:1/0
  |  
提交时间:2019/11/21
RE Reactive Magnetron Sputtering
Resistance Change
RRAM
Hafnium Oxide
Reproducible electro-resistance memory effect in Ag/La0.67Sr0.33MnO3 thin films
会议论文
MATERIALS SCIENCE AND TECHNOLOGY FOR NONVOLATILE MEMORIES, Symposium on Materials Science and Technology for Nonvolatile Memories held at the 2008MRS Spring Meeting, San Francisco, CA, Web of Science
Huang, Lina
;
Qu, Bingjun
;
Liu, Litian
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  |  
浏览/下载:3/0
Bistable resistance switching of Cu/Cu:HfO2/Pt for nonvolatile memory application
会议论文
2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Shanghai, China, November 1, 2010 - November 4, 2010
作者:
Wang, Yan
;
Long, Shi-Bing
;
Lv, Hang-Bing
;
Liu, Qi
;
Wang, Qin
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2017/01/20
Switching
Doping (additives)
Hafnium
Hafnium oxides
Integrated circuits
Oxides
Platinum
Random access storage
Switching systems
Bistable resistance
Cu-doping
DC electrical
Fast operation
Metallic filaments
Non-volatile memories
Non-volatile memory application
Resistance switching
Resistive random access memory
Resistive switching
Stable state
Temperature test
Rectifying Switching Characteristics of PtanO/Pt Structure Based Resistive Memory
会议论文
作者:
Wang, Jianfeng
;
Song, Zhongxiao
;
Xu, Kewei
;
Liu, Ming
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  |  
浏览/下载:2/0
  |  
提交时间:2019/12/10
Resistive Random Access Memory (ReRAM)
Pt/ZnO/Pt
Rectifying Effect
Structure
Improvement of durability and switching speed by incorporating nanocrystals in the HfO based resistive random access memory devices
会议论文
APPLIED PHYSICS LETTERS, 2018
作者:
Quantan Wu
;
Writam Banerjee
;
Jingchen Cao
;
Zhuoyu Ji
;
Ling Li
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  |  
浏览/下载:0/0
  |  
提交时间:2019/12/25
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