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	The Heavy Ion Radiation effects on the Pt/HfO2/Ti Resistive Switching Memory
	Wang, Yan1,2; Li, Yang1,2; Liu, Qi1,2; Bi, Jinshun1,2; Liu, Jing1,2; Sun, Haitao1,2; Lv, Hangbing1,2; Long, Shibing1,2; Xi, Kai3; Liu, Ming1,2
	2016
关键词	resistive random access memory (RRAM) heavy ion radiation electrical performance
英文摘要	In this summary, the resistive random access memory (RRAM) with the structure of Pt/HfO2/Ti is investigated for applications in radiation circumstance. The heavy ion Kr-86(26+) of HIRFL (The Heavy Ion Research Facility in Lanzhou) is used as the radiation source. The energy of Kr-86(26+) is 25 MeV/u, the LET is 37.6 MeV/(cm(2)/mg), and the fluence of 5e11 is achieved after 2 hours radiation. Basic performance of the Pt/HfO2/Ti is compared before and after radiation. An obvious decrease is shown in the original resistance value after radiation, and the forming process is no longer needed. The HRS, LRS, transition voltage and endurance are still stable after radiation.
会议录	2016 16TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS (RADECS)
会议录出版者	IEEE
会议录出版地	345 E 47TH ST, NEW YORK, NY 10017 USA
语种	英语
资助项目	Youth Innovation Promotion Association CAS[2015096]
WOS研究方向	Engineering
WOS记录号	WOS:000450759400022
内容类型	会议论文
源URL	[http://119.78.100.186/handle/113462/63971]
专题	中国科学院近代物理研究所
通讯作者	Liu, Ming
作者单位	1.Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China 2.Chinese Acad Sci, Inst Microelect, Lab Nanofabricat & Novel Device Integrat, Beijing 100029, Peoples R China 3.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China
推荐引用方式 GB/T 7714	Wang, Yan,Li, Yang,Liu, Qi,et al. The Heavy Ion Radiation effects on the Pt/HfO2/Ti Resistive Switching Memory[C]. 见:.

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