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科研机构
半导体研究所 [10]
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会议论文 [10]
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2008 [1]
2003 [1]
2002 [2]
2001 [2]
2000 [2]
1999 [2]
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半导体材料 [6]
半导体物理 [4]
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内容类型:会议论文
专题:半导体研究所
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Observation of photogalvanic current for interband absorption in InN films at room temperature
会议论文
2nd ieee international nanoelectronics conference, shanghai, peoples r china, mar 24-27, 2008
Tang, CG
;
Chen, YH
;
Liu, Y
;
Zhang, RQ
;
Liu, XL
;
Wang, ZG
;
Zhang, R
;
Zhang, Z
收藏
  |  
浏览/下载:38/0
  |  
提交时间:2010/03/09
QUANTUM-WELLS
SPIN
Hydrogen related defects in neutron-irradiated silicon grown in hydrogen ambient
会议论文
iumrs/icem 2002 conference, xian, peoples r china, jun 10-14, 2002
Wang QY
;
Wang JH
;
Deng HF
;
Lin LY
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2010/11/15
neutron irradiation
annealing
defects in silicon
SPECTRA
Strong red light emission from silicon nanocrystals embedded in SIO2 matrix
会议论文
conference on optoelectronic and microelectronic materials and devices (commad), sydney, australia, dec 11-13, 2002
Chen WD
;
Wang YQ
;
Chen CY
;
Diao HW
;
Liao XB
;
Kong GL
;
Hsu CC
收藏
  |  
浏览/下载:8/0
  |  
提交时间:2010/10/29
PHOTOLUMINESCENCE
LUMINESCENCE
SPECTROSCOPY
DEPOSITION
Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers
会议论文
9th international conference on defects: recognition, imaging and physics in semiconductors (drip ix), rimini, italy, sep 24-28, 2001
Zhao YW
;
Sun NF
;
Dong HW
;
Jiao JH
;
Zhao JQ
;
Sun TN
;
Lin LY
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2010/11/15
indium phosphide
semi-insulating
annealing
PICTS
photoluminescence
SEMIINSULATING INP
INDIUM-PHOSPHIDE
FE
PHOTOLUMINESCENCE
TEMPERATURE
Observation of the resonant Raman behavior of individual single-walled carbon nanotubes
会议论文
25th international conference on the physics of semiconductors (icps25), osaka, japan, sep 17-22, 2000
作者:
Tan PH
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2010/10/29
ELECTRIC-ARC TECHNIQUE
LARGE-SCALE
SCATTERING
SPECTRA
STOKES
MODES
Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability
会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Gao F
;
Lin YX
;
Huang DD
;
Li JP
;
Sun DZ
;
Kong MY
;
Zeng YP
;
Li JM
;
Lin LY
收藏
  |  
浏览/下载:8/0
  |  
提交时间:2010/11/15
annealing
molecular beam epitaxy
germanium silicon alloys
semiconducting materials
STRAIN RELAXATION
Proof of InAs/GaAs self-organized quantum dot lasing and the experimental determination of local Strain effect on the band structures
会议论文
26th international symposium on compound semiconducors, berlin, germany, aug 22-26, 1999
Wang H
;
Wang HL
;
Feng SL
;
Zhu HJ
;
Wang XD
;
Guo ZS
;
Ning D
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2010/11/15
ELECTRONIC-STRUCTURE
CARRIER RELAXATION
ENERGY-LEVELS
SPECTROSCOPY
Electronic characteristics of InAs self-assembled quantum dots
会议论文
9th international conference on modulated semiconductor structures (mss9), fukuoka, japan, jul 12-16, 1999
Wang HL
;
Feng SL
;
Zhu HJ
;
Ning D
;
Chen F
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2010/11/15
InAs/GaAs quantum dots
self-assembled structure
DLTS
PL
band offset
ENERGY-LEVELS
CARRIER RELAXATION
SPECTROSCOPY
Photocurrent derivative spectra of ZnCdSe-ZnSe double multi-quantum wells
会议论文
40th electronic materials conference (emc-40), charlottesville, virginia, jun 24-26, 1998
作者:
Zhang JY
;
Jiang DS
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2010/11/15
double multi-quantum wells
photocurrent spectra
ZnCdSe-ZnSe
SPECTROSCOPY
PHOTOLUMINESCENCE
HETEROSTRUCTURES
PHOTODETECTORS
First charge collection and position-precision data on the medium-resistivity silicon strip detectors before and after neutron irradiation up to 2x10(14) n/cm(2)
会议论文
2nd international conference on radiation effects on semiconductor materials, detectors and devices, florence, italy, mar 04-06, 1998
Li Z
;
Dezilllie B
;
Eremin V
;
Li CJ
;
Verbitskaya E
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2010/11/15
strip detectors
silicon detectors
annealing
simulation
irradiation
N-EFF
JUNCTION DETECTORS
RADIATION-DAMAGE
MODELS
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