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科研机构
半导体研究所 [15]
内容类型
会议论文 [15]
发表日期
2007 [1]
2002 [2]
2001 [2]
2000 [3]
1999 [3]
1998 [3]
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半导体材料 [7]
半导体物理 [5]
光电子学 [2]
半导体器件 [1]
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内容类型:会议论文
专题:半导体研究所
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The research of range-gated laser night vision system on cars - art. no. 68351V
会议论文
conference on infrared materials, devices and applications, beijing, peoples r china, nov 12-15, 2007
Zeng, ZY
;
Fan, HL
;
Hejun, ST
收藏
  |  
浏览/下载:33/0
  |  
提交时间:2010/03/09
range-gated
backscattered light
car
night vision system
Strong red light emission from silicon nanocrystals embedded in SIO2 matrix
会议论文
conference on optoelectronic and microelectronic materials and devices (commad), sydney, australia, dec 11-13, 2002
Chen WD
;
Wang YQ
;
Chen CY
;
Diao HW
;
Liao XB
;
Kong GL
;
Hsu CC
收藏
  |  
浏览/下载:8/0
  |  
提交时间:2010/10/29
PHOTOLUMINESCENCE
LUMINESCENCE
SPECTROSCOPY
DEPOSITION
Optical properties of AIInGaN quaternary alloys
会议论文
conference on optoelectronic and microelectronic materials and devices (commad), sydney, australia, dec 11-13, 2002
Huang JS
;
Dong X
;
Luo XD
;
Liu XL
;
Xu ZY
;
Ge WK
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2010/10/29
LIGHT-EMITTING-DIODES
LOCALIZED EXCITONS
LUMINESCENCE
RELAXATION
SILICON
BAND
Optical characterization of the Ge/Si (001) islands in multilayer structure
会议论文
asia-pacific optical and wireless communications conference (apoc 2001), beijing, peoples r china, nov 12-15, 2001
Huang CJ
;
Zuo YH
;
Li C
;
Li DZ
;
Cheng BW
;
Luo LP
;
Yu JZ
;
Wang QM
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2010/10/29
Ge/Si islands
quantum dot
band alignment
PL
SI/SI1-XGEX QUANTUM-WELLS
STRANSKI-KRASTANOV GROWTH
II BAND ALIGNMENT
GE ISLANDS
TEMPERATURE-DEPENDENCE
PHOTOLUMINESCENCE
LAYERS
LUMINESCENCE
ORGANIZATION
MECHANISM
Hydrogen behavior in GaN epilayers grown by NH3-MBE
会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Kong MY
;
Zhang JP
;
Wang XL
;
Sun DZ
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2010/11/15
impurities
molecular beam epitaxy
nitrides
semiconducting III-V materials
GALLIUM NITRIDE
SAPPHIRE SUBSTRATE
DEFECTS
HETEROSTRUCTURE
SEMICONDUCTORS
STRESS
Residual donors in undoped LEC InP
会议论文
11th international semiconducting and insulating materials conference (simc-xi), canberra, australia, jul 03-07, 2000
Zhao YW
;
Sun NF
;
Sun TN
;
Lin LY
;
Wu XW
;
Guo WL
;
Wu X
;
Bi KY
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2010/10/29
INDIUM-PHOSPHIDE
CARBON
DEFECTS
GROWTH
Proof of InAs/GaAs self-organized quantum dot lasing and the experimental determination of local Strain effect on the band structures
会议论文
26th international symposium on compound semiconducors, berlin, germany, aug 22-26, 1999
Wang H
;
Wang HL
;
Feng SL
;
Zhu HJ
;
Wang XD
;
Guo ZS
;
Ning D
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2010/11/15
ELECTRONIC-STRUCTURE
CARRIER RELAXATION
ENERGY-LEVELS
SPECTROSCOPY
Electronic characteristics of InAs self-assembled quantum dots
会议论文
9th international conference on modulated semiconductor structures (mss9), fukuoka, japan, jul 12-16, 1999
Wang HL
;
Feng SL
;
Zhu HJ
;
Ning D
;
Chen F
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2010/11/15
InAs/GaAs quantum dots
self-assembled structure
DLTS
PL
band offset
ENERGY-LEVELS
CARRIER RELAXATION
SPECTROSCOPY
Photocurrent derivative spectra of ZnCdSe-ZnSe double multi-quantum wells
会议论文
40th electronic materials conference (emc-40), charlottesville, virginia, jun 24-26, 1998
作者:
Zhang JY
;
Jiang DS
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2010/11/15
double multi-quantum wells
photocurrent spectra
ZnCdSe-ZnSe
SPECTROSCOPY
PHOTOLUMINESCENCE
HETEROSTRUCTURES
PHOTODETECTORS
First charge collection and position-precision data on the medium-resistivity silicon strip detectors before and after neutron irradiation up to 2x10(14) n/cm(2)
会议论文
2nd international conference on radiation effects on semiconductor materials, detectors and devices, florence, italy, mar 04-06, 1998
Li Z
;
Dezilllie B
;
Eremin V
;
Li CJ
;
Verbitskaya E
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2010/11/15
strip detectors
silicon detectors
annealing
simulation
irradiation
N-EFF
JUNCTION DETECTORS
RADIATION-DAMAGE
MODELS
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