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浏览/检索结果: 共7条，第1-7条 帮助 限定条件 学科主题：半导体物理     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Properties of AlyGa1-yN/AlxGa1-xN/AlN/GaN Double-Barrier High Electron Mobility Transistor Structure 期刊论文 chinese physics letters, 2009, 卷号: 26, 期号: 1, 页码: art. no. 017301 Guo LC; Wang XL; Xiao HL; Ran JX; Wang CM; Ma ZY; Luo WJ; Wang ZG 收藏  |  浏览/下载：193/43  |  提交时间：2010/03/08 CONTENT ALGAN/GAN HETEROSTRUCTURES  CHEMICAL-VAPOR-DEPOSITION  FIELD-EFFECT TRANSISTORS  AL-CONTENT  ALGAN/ALN/GAN HETEROSTRUCTURES  HEMT STRUCTURES  PHASE EPITAXY  SAPPHIRE  GAS  DENSITIES   Influence of V/III ratio on the structural and photoluminescence properties of In0.52AlAs/In0.53GaAs metamorphic high electron mobility transistor grown by molecular beam epitaxy 期刊论文 chinese physics b, 2008, 卷号: 17, 期号: 3, 页码: 1119-1123 Gao, HL; Zeng, YP; Wang, BQ; Zhu, ZP; Wang, ZG 收藏  |  浏览/下载：54/6  |  提交时间：2010/03/08 molecular beam epitaxy  semiconducting III-V materials  high electron mobility transistors   1-mm gate periphery AlGaN/AIN/GaN HEMTs on SiC with output power of 9.39 W at 8 GHz 期刊论文 solid-state electronics, 2007, 卷号: 51, 期号: 3, 页码: 428-432 Wang XL; Cheng TS; Ma ZY; Hu G; Xiao HL; Ran JX; Wang CM; Luo WJ 收藏  |  浏览/下载：95/0  |  提交时间：2010/03/29 AlGaN/GaN   Observations on subband electron properties in In0.65Ga0.35As/In0.52Al0.48As MM-HEMT with Si delta-doped on the barriers 期刊论文 acta physica sinica, 2007, 卷号: 56, 期号: 7, 页码: 4143-4147 Zhou WZ (Zhou Wen-Zheng); Lin T (Lin Tie); Shang LY (Shang Li-Yan); Huang ZM (Huang Zhi-Ming); Zhu B (Zhu Bo); Cui LJ (Cui Li-Jie); Gao HL (Gao Hong-Ling); Li DL (Li Dong-Lin); Guo SL (Guo Shao-Ling); Gui YS (Gui Yong-Sheng); Chu JH (Chu Jun-Hao) 收藏  |  浏览/下载：138/0  |  提交时间：2010/03/29 SdH oscillation   A bistable, self-latching inverter by the monolithic integration of resonant tunnelling diode and high electron mobility transistor 期刊论文 chinese physics, 2006, 卷号: 15, 期号: 10, 页码: 2422-2426 Ma L (Ma Long); Huang YL (Huang Ying-Long); Zhang Y (Zhang Yang); Yang FH (Yang Fu-Hua); Wang LC (Wang Liang-Chen) 收藏  |  浏览/下载：23/0  |  提交时间：2010/04/11 resonant tunnelling diode (RTD)  high electron mobility transistor (HEMT)  molecular beam epitaxy (MBE)  bistability  self-latching   Deep centers investigations of P-HEMT functional materials of ultra-high-speed microstructures grown by MBE 期刊论文 acta physica sinica, 2002, 卷号: 51, 期号: 2, 页码: 372-376 Lu LW; Zhang YH; Wang J; Ge W 收藏  |  浏览/下载：135/11  |  提交时间：2010/08/12 molecular beam epitaxy growth  P-HEMT and HEMT functional materials  deep centers  ALXGA1-XAS  EPITAXY  TRENDS   Rapid thermal annealing effects on step-graded InAlAs buffer layer and In0.52Al0.48As/In0.53Ga0.47As metamorphic high electron mobility transistor structures on GaAs substrates 期刊论文 journal of applied physics, 2002, 卷号: 91, 期号: 4, 页码: 2429-2432 Cui LJ; Zeng YP; Wang BQ; Wu J; Zhu ZP; Lin LY 收藏  |  浏览/下载：70/6  |  提交时间：2010/08/12 HEMTS