A bistable, self-latching inverter by the monolithic integration of resonant tunnelling diode and high electron mobility transistor

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	A bistable, self-latching inverter by the monolithic integration of resonant tunnelling diode and high electron mobility transistor
	Ma L (Ma Long) ; Huang YL (Huang Ying-Long) ; Zhang Y (Zhang Yang) ; Yang FH (Yang Fu-Hua) ; Wang LC (Wang Liang-Chen)
刊名	chinese physics
	2006
卷号	15 期号:10 页码:2422-2426
关键词	resonant tunnelling diode (RTD) high electron mobility transistor (HEMT) molecular beam epitaxy (MBE) bistability self-latching
ISSN号	1009-1963
通讯作者	ma, l, chinese acad sci, inst semicond, engn res ctr semicond integrated technol, beijing 100083, peoples r china. e-mail: malong@semi.ac.cn
中文摘要	this paper reports that the structures of algaas/ingaas high electron mobility transistor (hemt) and alas/gaas resonant tunnelling diode (rtd) are epitaxially grown by molecular beam epitaxy ( mbe) in turn on a gaas substrate. an al0.24ga0.76as chair barrier layer, which is grown adjacent to the top alas barrier, helps to reduce the valley current of rtd. the peak-to-valley current ratio of fabricated rtd is 4.8 and the transconductance for the 1-mu m gate hemt is 125ms/mm. a static inverter which consists of two rtds and a hemt is designed and fabricated. unlike a conventional cmos inverter, the novel inverter exhibits self-latching property.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-04-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10380]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Ma L ,Huang YL ,Zhang Y ,et al. A bistable, self-latching inverter by the monolithic integration of resonant tunnelling diode and high electron mobility transistor[J]. chinese physics,2006,15(10):2422-2426.
APA	Ma L ,Huang YL ,Zhang Y ,Yang FH ,&Wang LC .(2006).A bistable, self-latching inverter by the monolithic integration of resonant tunnelling diode and high electron mobility transistor.chinese physics,15(10),2422-2426.
MLA	Ma L ,et al."A bistable, self-latching inverter by the monolithic integration of resonant tunnelling diode and high electron mobility transistor".chinese physics 15.10(2006):2422-2426.