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科研机构
半导体研究所 [13]
内容类型
期刊论文 [12]
会议论文 [1]
发表日期
2010 [2]
2009 [2]
2008 [3]
2003 [2]
2002 [1]
2000 [2]
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半导体物理 [13]
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Spin injection in the multiple quantum-well LED structure with the Fe/AlO (x) injector
期刊论文
science china-physics mechanics & astronomy, 2010, 卷号: 53, 期号: 4, 页码: 649-653
Wu H (Wu Hao)
;
Zheng HZ (Zheng HouZhi)
;
Liu J (Liu Jian)
;
Li GR (Li GuiRong)
;
Xu P (Xu Ping)
;
Zhu H (Zhu Hui)
;
Zhang H (Zhang Hao)
;
Zhao JH (Zhao JianHua)
收藏
  |  
浏览/下载:81/2
  |  
提交时间:2010/05/04
spintronics
spin injection
light emitting diode
multiple quantum well
SEMICONDUCTOR SPINTRONICS
Band-tail shape and transport near the metal-insulator transition in Si-doped
期刊论文
physical review b, 2010, 卷号: 82, 期号: 12, 页码: art. no. 125202
Misuraca J (Misuraca Jennifer)
;
Trbovic J (Trbovic Jelena)
;
Lu J (Lu Jun)
;
Zhao JH (Zhao Jianhua)
;
Ohno Y (Ohno Yuzo)
;
Ohno H (Ohno Hideo)
;
Xiong P (Xiong Peng)
;
von Molnar S (von Molnar Stephan)
收藏
  |  
浏览/下载:25/0
  |  
提交时间:2010/10/11
PERSISTENT PHOTOCONDUCTIVITY
DX CENTERS
ALXGA1-XAS
GAAS
SEMICONDUCTORS
Efficient hole transport in asymmetric coupled InGaN multiple quantum wells
期刊论文
applied physics letters, 2009, 卷号: 95, 期号: 16, 页码: art.no.161110
Zhang JY (Zhang Jiang-Yong)
;
Cai LE (Cai Li-E)
;
Zhang BP (Zhang Bao-Ping)
;
Hu XL (Hu Xiao-Long)
;
Jiang F (Jiang Fang)
;
Yu JZ (Yu Jin-Zhong)
;
Wang QM (Wang Qi-Ming)
收藏
  |  
浏览/下载:142/33
  |  
提交时间:2010/03/08
Indium-Induced Effect on Polarized Electroluminescence from InGaN/GaN MQWs Light Emitting Diodes
期刊论文
chinese physics letters, 2009, 卷号: 26, 期号: 8, 页码: art. no. 087802
Ruan J
;
Yu TJ
;
Jia CY
;
Tao RC
;
Wang ZG
;
Zhang GY
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  |  
浏览/下载:87/2
  |  
提交时间:2010/03/08
QUANTUM-WELL LASERS
OPTICAL GAIN
EMISSION
GAN
PHOTOLUMINESCENCE
SEMICONDUCTORS
LUMINESCENCE
SPECTRA
ORIGIN
ENERGY
Organic light-emitting diodes with magnesium doped CuPc as an efficient electron injection layer
期刊论文
chinese physics letters, 2008, 卷号: 25, 期号: 2, 页码: 719-721
Cao JS
;
Guan M
;
Cao GH
;
Zeng YP
;
Li JM
;
Qin DS
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  |  
浏览/下载:91/4
  |  
提交时间:2010/03/08
DEVICES
Photoluminescence properties of tensile-strained GaAsP/GaInP single quantum wells grown by metal organic chemical vapor deposition
期刊论文
japanese journal of applied physics, 2008, 卷号: 47, 期号: 9, 页码: 7026-7031 part 1
Zhong, L
;
Ma, XY
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  |  
浏览/下载:55/0
  |  
提交时间:2010/03/08
tensile strain
GaAsP/GaInP
photoluminescence
quantum well
laser diodes
LP-MOCVD
Improved light extraction of GaN-based LEDs with nano-roughened p-GaN surfaces
期刊论文
chinese physics letters, 2008, 卷号: 25, 期号: 9, 页码: 3448-3451
Gao, HY
;
Yan, FW
;
Fan, ZC
;
Li, JM
;
Zeng, YP
;
Wang, GH
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  |  
浏览/下载:74/0
  |  
提交时间:2010/03/08
EMITTING-DIODES
EFFICIENCY
OUTPUT
Size evolution and optical properties of self-assembled InAs quantum dots on different matrix
期刊论文
physica e-low-dimensional systems & nanostructures, 2003, 卷号: 19, 期号: 3, 页码: 292-297
作者:
Xu B
收藏
  |  
浏览/下载:57/0
  |  
提交时间:2010/08/12
self-assembled
MBE
quantum dots
photoluminescence
1.3 MU-M
TEMPERATURE-DEPENDENCE
EXCITED-STATES
INXGA1-XAS
LASERS
INP
Design of high brightness cubic-GaN LEDs grown on GaAs substrate
期刊论文
journal of the korean physical society, 2003, 卷号: 42, 期号: 0, 页码: s753-s756
作者:
Zhao DG
收藏
  |  
浏览/下载:51/0
  |  
提交时间:2010/08/12
wafer bunding
cubic GaN
LIGHT-EMITTING-DIODES
FIELD-EFFECT TRANSISTOR
SINGLE-CRYSTAL GAN
MICROWAVE PERFORMANCE
MIRROR
JUNCTION
Optical properties of AIInGaN quaternary alloys
会议论文
conference on optoelectronic and microelectronic materials and devices (commad), sydney, australia, dec 11-13, 2002
Huang JS
;
Dong X
;
Luo XD
;
Liu XL
;
Xu ZY
;
Ge WK
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  |  
浏览/下载:10/0
  |  
提交时间:2010/10/29
LIGHT-EMITTING-DIODES
LOCALIZED EXCITONS
LUMINESCENCE
RELAXATION
SILICON
BAND
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