Indium-Induced Effect on Polarized Electroluminescence from InGaN/GaN MQWs Light Emitting Diodes

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	Indium-Induced Effect on Polarized Electroluminescence from InGaN/GaN MQWs Light Emitting Diodes
	Ruan J ; Yu TJ ; Jia CY ; Tao RC ; Wang ZG ; Zhang GY
刊名	chinese physics letters
	2009
卷号	26 期号:8 页码:art. no. 087802
关键词	QUANTUM-WELL LASERS OPTICAL GAIN EMISSION GAN PHOTOLUMINESCENCE SEMICONDUCTORS LUMINESCENCE SPECTRA ORIGIN ENERGY
ISSN号	0256-307x
通讯作者	yu tj peking univ sch phys state key lab mesoscop phys beijing 100871 peoples r china. e-mail address: tongjun@pku.edu.cn
中文摘要	polarization-resolved edge-emitting electroluminescence (el) studies of ingan/gan mqws of wavelengths from near-uv (390 nm) to blue (468 nm) light-emitting diodes (leds) are performed. although the te mode is dominant in all the samples of ingan/gan mqw leds, an obvious difference of light polarization properties is found in the ingan/gan mqw leds with different wavelengths. the polarization degree decreases from 52.4% to 26.9% when light wavelength increases. analyses of band structures of ingan/gan quantum wells and luminescence properties of quantum dots imply that quantum-dot-like behavior is the dominant reason for the low luminescence polarization degree of blue leds, and the high luminescence polarization degree of uv leds mainly comes from qw confinement and the strain effect. therefore, indium induced carrier confinement (quantum-dot-like behavior) might play a major role in the polarization degree change of ingan/gan mqw leds from near violet to blue.
学科主题	半导体物理
收录类别	SCI
资助信息	national natural science foundation of china 60676032 national key basic research special foundation of china tg2007cb307004 supported by the national natural science foundation of china under grant no 60676032 and the national key basic research special foundation of china under grant no tg2007cb307004.
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/7057]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Ruan J,Yu TJ,Jia CY,et al. Indium-Induced Effect on Polarized Electroluminescence from InGaN/GaN MQWs Light Emitting Diodes[J]. chinese physics letters,2009,26(8):art. no. 087802.
APA	Ruan J,Yu TJ,Jia CY,Tao RC,Wang ZG,&Zhang GY.(2009).Indium-Induced Effect on Polarized Electroluminescence from InGaN/GaN MQWs Light Emitting Diodes.chinese physics letters,26(8),art. no. 087802.
MLA	Ruan J,et al."Indium-Induced Effect on Polarized Electroluminescence from InGaN/GaN MQWs Light Emitting Diodes".chinese physics letters 26.8(2009):art. no. 087802.