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科研机构
半导体研究所 [47]
内容类型
期刊论文 [47]
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2011 [1]
2010 [1]
2009 [3]
2008 [5]
2007 [1]
2006 [5]
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半导体物理 [47]
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学科主题:半导体物理
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The explanation of InN bandgap discrepancy based on experiments and first-principle calculations
期刊论文
physics letters a, 2011, 卷号: 375, 期号: 7, 页码: 1152-1155
作者:
Li JB
收藏
  |  
浏览/下载:59/6
  |  
提交时间:2011/07/05
First principle calculation
Indium nitride
Band gap
Defect
INITIO MOLECULAR-DYNAMICS
AUGMENTED-WAVE METHOD
INDIUM NITRIDE
GAP
PSEUDOPOTENTIALS
SEMICONDUCTORS
IMPURITIES
ABSORPTION
DEFECTS
ALLOYS
Defects in gallium nitride nanowires: First principles calculations
期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 4, 页码: art. no. 044305
Wang ZG (Wang Zhiguo)
;
Li JB (Li Jingbo)
;
Gao F (Gao Fei)
;
Weber WJ (Weber William J.)
收藏
  |  
浏览/下载:105/1
  |  
提交时间:2010/10/11
CHEMICAL-VAPOR-DEPOSITION
GAN NANOWIRES
NATIVE DEFECTS
COMPLEXES
EPITAXY
GROWTH
ARRAYS
Lattice polarity detection of InN by circular photogalvanic effect
期刊论文
applied physics letters, 2009, 卷号: 95, 期号: 3, 页码: art. no. 031902
Zhang Q
;
Wang XQ
;
He XW
;
Yin CM
;
Xu FJ
;
Shen B
;
Chen YH
;
Wang ZG
;
Ishitani Y
;
Yoshikawa A
收藏
  |  
浏览/下载:66/0
  |  
提交时间:2010/03/08
III-V semiconductors
indium compounds
nondestructive testing
photoconductivity
radiation effects
semiconductor thin films
wide band gap semiconductors
Deep levels in high resistivity GaN detected by thermally stimulated luminescence and first-principles calculations
期刊论文
journal of physics d-applied physics, 2009, 卷号: 42, 期号: 15, 页码: art. no. 155403
作者:
Li JB
;
Hou QF
收藏
  |  
浏览/下载:66/11
  |  
提交时间:2010/03/08
N-TYPE GAN
ELECTRON-MOBILITY TRANSISTORS
VAPOR-PHASE EPITAXY
DEFECTS
THERMOLUMINESCENCE
CARBON
TRAP
InGaN/GaN p-i-n Photodiodes Fabricated with Mg-Doped p-InGaN Layer
期刊论文
chinese physics letters, 2009, 卷号: 26, 期号: 10, 页码: art.no.107302
Wang H (Wang Hui)
;
Zhu JH (Zhu Ji-Hong)
;
Jiang DS (Jiang De-Sheng)
;
Zhu JJ (Zhu Jian-Jun)
;
Zhao DG (Zhao De-Gang)
;
Liu ZS (Liu Zong-Shun)
;
Zhang SM (Zhang Shu-Ming)
;
Yang H (Yang Hui)
收藏
  |  
浏览/下载:158/39
  |  
提交时间:2010/03/08
TRANSPORT CHARACTERISTICS
Nitrogen defects and ferromagnetism in Cr-doped dilute magnetic semiconductor AlN from first principles
期刊论文
physical review b, 2008, 卷号: 78, 期号: 19, 页码: art. no. 195206
Shi LJ
;
Zhu LF
;
Zhao YH
;
Liu BG
收藏
  |  
浏览/下载:217/56
  |  
提交时间:2010/03/08
ab initio calculations
aluminium compounds
annealing
band structure
chromium
Curie temperature
density functional theory
exchange interactions (electron)
ferromagnetic materials
III-V semiconductors
semimagnetic semiconductors
total energy
vacancies (crystal)
Enhanced electroluminescence intensity of InGaN/GaN multi-quantum-wells based on Mg-doped GaN annealed in O-2
期刊论文
applied physics letters, 2008, 卷号: 93, 期号: 10, 页码: art. no. 102112
Ma, P
;
Gai, YQ
;
Wang, JX
;
Yang, FH
;
Zeng, YP
;
Li, JM
;
Li, JB
收藏
  |  
浏览/下载:25/0
  |  
提交时间:2010/03/08
P-TYPE GAN
MOLECULAR-BEAM EPITAXY
AUGMENTED-WAVE METHOD
VAPOR-PHASE EPITAXY
ELECTRICAL-PROPERTIES
OXYGEN
ACTIVATION
SILICON
High-density and narrow size-distribution InAs quantum dots formed by a modified two-step growth
期刊论文
chinese physics b, 2008, 卷号: 17, 期号: 1, 页码: 323-327
She-Song, H
;
Zhi-Chuan, N
;
Feng, Z
;
Hai-Qiao, N
;
Huan, Z
;
Dong-Hai, W
;
Zheng, S
收藏
  |  
浏览/下载:42/3
  |  
提交时间:2010/03/08
molecular beam epitaxy
quantum dots
a modified two-step growth
First-principles study of defects in CuGaO2
期刊论文
chinese physics letters, 2008, 卷号: 25, 期号: 8, 页码: 2997-3000
Fang, ZJ
;
Fang, C
;
Shi, LJ
;
Liu, YH
;
He, MC
收藏
  |  
浏览/下载:48/0
  |  
提交时间:2010/03/08
PULSED-LASER DEPOSITION
AUGMENTED-WAVE METHOD
ELECTRICAL-CONDUCTION
DELAFOSSITE STRUCTURE
THIN-FILMS
TRANSPARENT
CUALO2
CUINO2
OXIDE
Electroluminescence from nano-crystalline Si/SiO2 structures embedded in pn junctions
期刊论文
superlattices and microstructures, 2008, 卷号: 44, 期号: 2, 页码: 160-165
Chen DY
;
Wang X
;
Wei DY
;
Wang T
;
Xu J
;
Ma ZY
;
Li W
;
Chen KJ
;
Shi WH
;
Wang QM
收藏
  |  
浏览/下载:95/0
  |  
提交时间:2010/03/08
PECVD
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