Lattice polarity detection of InN by circular photogalvanic effect

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Lattice polarity detection of InN by circular photogalvanic effect
	Zhang Q ; Wang XQ ; He XW ; Yin CM ; Xu FJ ; Shen B ; Chen YH ; Wang ZG ; Ishitani Y ; Yoshikawa A
刊名	applied physics letters
	2009
卷号	95 期号:3 页码:art. no. 031902
关键词	III-V semiconductors indium compounds nondestructive testing photoconductivity radiation effects semiconductor thin films wide band gap semiconductors
ISSN号	0003-6951
通讯作者	zhang q peking univ sch phys state key lab artificial microstruct & mesoscop p beijing 100871 peoples r china. e-mail address: wangshi@pku.edu.cn ; bshen@pku.edu.cn
中文摘要	we report an effective and nondestructive method based on circular photogalvanic effect (cpge) to detect the lattice polarity of inn. because of the lattice inversion between in- and n-polar inn, the energy band spin splitting is opposite for inn films with different polarities. consequently under light irradiation with the same helicity, cpge photocurrents in in- and n-polar layers will have opposite directions, thus the polarity can be detected. this method is demonstrated by our cpge measurements in both n- and p-type inn films.
学科主题	半导体物理
收录类别	SCI
资助信息	national natural science foundation of china 60806042 107740016073603360890193national basic research program of china 2006cb604908 2006cb921607 research fund for doctoral program of higher education in china 200800011021 20060001018nsfc 60625402
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/7067]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhang Q,Wang XQ,He XW,et al. Lattice polarity detection of InN by circular photogalvanic effect[J]. applied physics letters,2009,95(3):art. no. 031902.
APA	Zhang Q.,Wang XQ.,He XW.,Yin CM.,Xu FJ.,...&Yoshikawa A.(2009).Lattice polarity detection of InN by circular photogalvanic effect.applied physics letters,95(3),art. no. 031902.
MLA	Zhang Q,et al."Lattice polarity detection of InN by circular photogalvanic effect".applied physics letters 95.3(2009):art. no. 031902.