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CORC

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Stable 6%-e_cient Sb2Se3 solar cells with a ZnO bu_er layer 期刊论文
NATURE ENERGY, 2017, 卷号: 2, 页码: 17046
作者:  LiangWang;  Deng-Bing Li;  Kanghua Li;  Chao Chen;  Hui-Xiong Deng
收藏  |  浏览/下载：66/0  |  提交时间：2018/06/15
Tunable Schottky Barrier at MoSe2/Metal Interfaces with a Buffer Layer 期刊论文
The Journal of Physical Chemistry C, 2017, 卷号: 121, 页码: 9305−9311
作者:  Le Huang;  Bo Li;  Mianzeng Zhong;  Zhongming Wei;  Jingbo Li
收藏  |  浏览/下载：19/0  |  提交时间：2018/06/15
Investigation of structural and optical anisotropy of m-plane InN films grown on gamma-LiAlO2(100) by metal organic chemical vapour deposition 期刊论文
journal of physics d-applied physics, 2011, 卷号: 44, 期号: 24, 页码: article no.245402
Fu D; Zhang R; Liu B; Xie ZL; Xiu XQ; Gu SL; Lu H; Zheng YD; Chen YH; Wang ZG
收藏  |  浏览/下载：35/2  |  提交时间：2011/07/05
Growth and Characterization of GaSb-Based Type-II InAs/GaSb Superlattice Photodiodes for Mid-Infrared Detection 期刊论文
chinese physics letters, 2010, 卷号: 27, 期号: 7, 页码: art. no. 077305
Wang GW (Wang Guo-Wei); Xu YQ (Xu Ying-Qiang); Guo J (Guo Jie); Tang B (Tang Bao); Ren ZW (Ren Zheng-Wei); He ZH (He Zhen-Hong); Niu ZC (Niu Zhi-Chuan)
收藏  |  浏览/下载：26/0  |  提交时间：2010/08/17
Current-driven domain wall motion across a wide temperature range in a (Ga,Mn)(As,P) device 期刊论文
applied physics letters, 2010, 卷号: 97, 期号: 26, 页码: article no.262102
Wang KY; Edmonds KW; Irvine AC; Tatara G; De Ranieri E; Wunderlich J; Olejnik K; Rushforth AW; Campion RP; Williams DA; Foxon CT; Gallagher BL
收藏  |  浏览/下载：46/2  |  提交时间：2011/07/05
MN)AS  (GA  
GaAs-Based Metamorphic Long-Wavelength InAs Quantum Dots Grown by Molecular Beam Epitaxy 期刊论文
chinese physics letters, 2009, 卷号: 26, 期号: 6, 页码: art. no. 067801
作者:  Xu YQ
收藏  |  浏览/下载：25/0  |  提交时间：2010/03/08
MU-M  LASER  ISLANDS  
Comparison of short period InAs/GaSb superlattices on GaSb and GaAs substrates 期刊论文
science in china series e-technological sciences, 2009, 卷号: 52, 期号: 1, 页码: 23-27
作者:  Xu YQ
收藏  |  浏览/下载：210/35  |  提交时间：2010/03/08
The effect of single AlGaN interlayer on the structural properties of GaN epilayers grown on Si (111) substrates 期刊论文
chinese physics b, 2009, 卷号: 18, 期号: 10, 页码: 4413-4417
Wu YX (Wu Yu-Xin); Zhu JJ (Zhu Jian-Jun); Zhao DG (Zhao De-Gang); Liu ZS (Liu Zong-Shun); Jiang DS (Jiang De-Sheng); Zhang SM (Zhang Shu-Ming); Wang YT (Wang Yu-Tian); Wang H (Wang Hui); Chen GF (Chen Gui-Feng); Yang H (Yang Hui)
收藏  |  浏览/下载：130/35  |  提交时间：2010/03/08
GaN  
GaAs Based InAs/GaSb Superlattice Short Wavelength Infrared Detectors Grown by Molecular Beam Epitaxy 期刊论文
chinese physics letters, 2009, 卷号: 26, 期号: 2, 页码: art. no. 028102
作者:  Tang B;  Wang GW;  Xu YQ
收藏  |  浏览/下载：159/45  |  提交时间：2010/03/08
Stress analysis of ZnO film with a GaN buffer layer on sapphire substrate 期刊论文
chinese physics letters, 2008, 卷号: 25, 期号: 6, 页码: 2277-2280
Cui, JP; Wang, XF; Duan, Y; He, JX; Zeng, YP
收藏  |  浏览/下载：61/0  |  提交时间：2010/03/08

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