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科研机构
半导体研究所 [11]
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会议论文 [11]
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2007 [1]
2006 [1]
2001 [2]
2000 [4]
1999 [2]
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半导体物理 [11]
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Self-assembled GaAs quantum rings by MBE droplet epitaxy
会议论文
china international conference on nanoscience and technology (chinanano 2005), beijing, peoples r china, jun 09-11, 2005
Huang, SS (Huang, Shesong)
;
Niu, ZC (Niu, Zhichuan)
;
Xia, JB (Xia, Jianbai)
收藏
  |  
浏览/下载:234/75
  |  
提交时间:2010/03/29
quantum single rings
concentric quantum double rings
coupled concentric quantum double ring
droplet epitaxy
1.3 mu m high indium content (42.5%) GaInNAs/GaAs quantum wells grown by molecular beam epitaxy
会议论文
32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005
Niu, ZC
;
Zhang, SY
;
Ni, HQ
;
Wu, DH
;
He, ZH
;
Sun, Z
;
Han, Q
;
Wu, RG
收藏
  |  
浏览/下载:224/60
  |  
提交时间:2010/03/29
IMPROVED LUMINESCENCE EFFICIENCY
TEMPERATURE
PHOTOLUMINESCENCE
NITROGEN
ORIGIN
DIODES
Observation of the resonant Raman behavior of individual single-walled carbon nanotubes
会议论文
25th international conference on the physics of semiconductors (icps25), osaka, japan, sep 17-22, 2000
作者:
Tan PH
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2010/10/29
ELECTRIC-ARC TECHNIQUE
LARGE-SCALE
SCATTERING
SPECTRA
STOKES
MODES
Modification of emission wavelength of self-assembled In(Ga)As/GaAs quantum dots covered by InxGa1-xAs(0 <= x <= 0.3) layer
会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Niu ZC
;
Wang XD
;
Miao ZH
;
Feng SL
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2010/11/15
crystal morphology
quantum dots
molecular beam epitaxy
semiconducting gallium arsenide
semiconducting indium gallium arsenide
1.35 MU-M
GAAS-SURFACES
PHOTOLUMINESCENCE
ISLANDS
Indium-doping enhanced two-dimensional-electron-gas performance in AlGaN/GaN heterostructures
会议论文
international workshop on nitride semiconductors (iwn 2000), nagoya, japan, sep 24-27, 2000
作者:
Han PD
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2010/10/29
AlGaN/GaN heterostructures
In-doping
2DEG
electron sheet density
X-ray diffraction
etching
CHEMICAL-VAPOR-DEPOSITION
MOLECULAR-BEAM EPITAXY
PHASE EPITAXY
MOBILITY
GROWTH
FILMS
Effect of rapid thermal annealing on electron emission and DX centers in strained InGaAs/GaAs single quantum well laser diodes
会议论文
11th international semiconducting and insulating materials conference (simc-xi), canberra, australia, jul 03-07, 2000
Lu LW
;
Zhang YH
;
Xu ZT
;
Xu ZY
;
Wang ZG
;
Wang J
;
Ge WK
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2010/11/15
Proof of InAs/GaAs self-organized quantum dot lasing and the experimental determination of local Strain effect on the band structures
会议论文
26th international symposium on compound semiconducors, berlin, germany, aug 22-26, 1999
Wang H
;
Wang HL
;
Feng SL
;
Zhu HJ
;
Wang XD
;
Guo ZS
;
Ning D
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2010/11/15
ELECTRONIC-STRUCTURE
CARRIER RELAXATION
ENERGY-LEVELS
SPECTROSCOPY
Electronic characteristics of InAs self-assembled quantum dots
会议论文
9th international conference on modulated semiconductor structures (mss9), fukuoka, japan, jul 12-16, 1999
Wang HL
;
Feng SL
;
Zhu HJ
;
Ning D
;
Chen F
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2010/11/15
InAs/GaAs quantum dots
self-assembled structure
DLTS
PL
band offset
ENERGY-LEVELS
CARRIER RELAXATION
SPECTROSCOPY
New way to enhance the uniformity of self-organized InAs quantum dots
会议论文
25th international symposium on compound semiconductors, nara, japan, oct 12-16, 1998
Zhu HJ
;
Wang H
;
Wang ZM
;
Cui LQ
;
Feng SL
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2010/11/15
MOLECULAR-BEAM EPITAXY
THRESHOLD
GROWTH
LASER
First charge collection and position-precision data on the medium-resistivity silicon strip detectors before and after neutron irradiation up to 2x10(14) n/cm(2)
会议论文
2nd international conference on radiation effects on semiconductor materials, detectors and devices, florence, italy, mar 04-06, 1998
Li Z
;
Dezilllie B
;
Eremin V
;
Li CJ
;
Verbitskaya E
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2010/11/15
strip detectors
silicon detectors
annealing
simulation
irradiation
N-EFF
JUNCTION DETECTORS
RADIATION-DAMAGE
MODELS
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