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科研机构
半导体研究所 [40]
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期刊论文 [34]
会议论文 [6]
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2011 [3]
2006 [6]
2004 [6]
2003 [1]
2002 [6]
2001 [3]
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半导体材料 [40]
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Influence of thermal stress on the characteristic parameters of AlGaN/GaN heterostructure Schottky contacts
期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 4, 页码: article no.47105
Lu YJ
;
Lin ZJ
;
Zhang Y
;
Meng LG
;
Cao ZF
;
Luan CB
;
Chen H
;
Wang ZG
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  |  
浏览/下载:58/2
  |  
提交时间:2011/07/05
AlGaN/GaN heterostructures
thermal stressing
polarization
self-consistently solving Schrodinger's and Poisson's equations
FIELD-EFFECT TRANSISTORS
POLARIZATION
STABILITY
CHARGE
GAN
Influence of electric field on persistent photoconductivity in unintentionally doped n-type GaN
期刊论文
applied physics letters, 2011, 卷号: 98, 期号: 10, 页码: article no.102104
作者:
Deng QW
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浏览/下载:47/5
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提交时间:2011/07/05
QUANTUM-WELL-STRUCTURE
ALGAN/GAN HETEROSTRUCTURE
YELLOW LUMINESCENCE
DEEP LEVELS
TRAP
PERFORMANCE
FREQUENCY
EPILAYERS
ORIGIN
DIODES
Quantitative surface enhanced Raman scattering detection based on the "sandwich" structure substrate
期刊论文
spectrochimica acta part a-molecular and biomolecular spectroscopy, 2011, 卷号: 79, 期号: 3, 页码: 625-630
作者:
Tang AW
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浏览/下载:83/5
  |  
提交时间:2011/07/15
SILVER NANORODS
HOT-SPOTS
ACTIVE SUBSTRATE
NANOWIRE ARRAYS
SPECTROSCOPY
SERS
NANOPARTICLES
SENSITIVITY
REDUCTION
STABILITY
Development of current-based microscopic defect analysis method using optical filling techniques for the defect study on heavily irradiated high-resistivity Si sensors/detectors
期刊论文
materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 283-287
Li Z (Li Z.)
;
Li CJ (Li C. J.)
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  |  
浏览/下载:50/0
  |  
提交时间:2010/04/11
DLTS
defects
detectors
sensors
current transient
SILICON DETECTORS
Origin of deep level defect related photoluminescence in annealed InP
期刊论文
journal of applied physics, 2006, 卷号: 100, 期号: 12, 页码: art.no.123519
Zhao, YW (Zhao, Youwen)
;
Dong, ZY (Dong, Zhiyuan)
;
Miao, SS (Miao, Shanshan)
;
Deng, AH (Deng, Aihong)
;
Yang, J (Yang, Jun)
;
Wang, B (Wang, Bo)
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  |  
浏览/下载:58/0
  |  
提交时间:2010/03/29
DOPED SEMIINSULATING INP
Recent research results on deep level defects in semi-insulating InP - Application to improve material quality
会议论文
12th international conference on indium phosphide and related materials, princeton, nj, may 07-11, 2006
Zhao, YW (Zhao, Youwen)
;
Dong, ZY (Dong, Zhiyuan)
;
Dong, HW (Dong, Hongwei)
;
Sun, NF (Sun, Niefeng)
;
Sun, TN (Sun, Tongnian)
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  |  
浏览/下载:61/12
  |  
提交时间:2010/03/29
STIMULATED CURRENT SPECTROSCOPY
CURRENT TRANSIENT SPECTROSCOPY
FE-DOPED INP
POINT-DEFECTS
COMPENSATION
TEMPERATURE
DONORS
TRAPS
Terahertz pulse generation with LT-GaAs photoconductive antenna
会议论文
joint 31st international conference on infrared and millimeter waves/14th international conference on terahertz electronics, shanghai, peoples r china, sep 18-22, 2006
Cui, LJ (Cui, L. J.)
;
Zeng, YP (Zeng, Y. P.)
;
Zhao, GZ (Zhao, G. Z.)
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  |  
浏览/下载:160/48
  |  
提交时间:2010/03/29
TEMPERATURE-GROWN GAAS
CARRIER DYNAMICS
EMISSION
Light-induced changes in diphasic nanocrystalline silicon films and solar cells
期刊论文
journal of non-crystalline solids, 2006, 卷号: 352, 期号: 9-20, 页码: 1904-1908
Hao HY (Hao Huiying)
;
Liao XB (Liao Xianbo)
;
Zeng XB (Zeng Xiangbo)
;
Diao HW (Diao Hongwei)
;
Xu Y (Xu Ying)
;
Kong GL (Kong Guanglin)
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  |  
浏览/下载:53/0
  |  
提交时间:2010/04/11
silicon
OPEN-CIRCUIT VOLTAGE
AMORPHOUS-SILICON
RAMAN-SPECTROSCOPY
STABILITY
Growth of high quality semi-insulating InP single crystal by suppression of compensation defects
期刊论文
journal of rare earths, 2006, 卷号: 24, 期号: sp.iss.si, 页码: 75-77
Zhao YW
;
Dong ZY
;
Duan ML
;
Sun WR
;
Yang ZX
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  |  
浏览/下载:38/0
  |  
提交时间:2010/04/11
indium phosphide
defect
semi-insualting
STIMULATED CURRENT SPECTROSCOPY
CURRENT TRANSIENT SPECTROSCOPY
SEMI-INSULATING INP
DEEP-LEVEL DEFECTS
FE
Shallow donor defect formation and its influence on semi-insulating indium phosphide after high temperature annealing with long duration
会议论文
13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004
Zhao, YW
;
Dong, ZY
;
Zhang, YH
;
Li, CJ
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  |  
浏览/下载:177/52
  |  
提交时间:2010/03/29
DEEP-LEVEL DEFECTS
FE-DOPED INP
GROWN INP
SPECTROSCOPY
RESONANCE
WAFER
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