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CORC

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Comparative study of the surface passivation on crystalline silicon by silicon thin films with different structures 期刊论文
physica b-condensed matter, 2010, 卷号: 405, 期号: 1, 页码: 61-64
Zhao L; Diao HW; Zeng XB; Zhou CL; Li HL; Wang WJ
收藏  |  浏览/下载：214/74  |  提交时间：2010/04/04
Valence band offset of MgO/InN heterojunction measured by x-ray photoelectron spectroscopy 期刊论文
applied physics letters, 2008, 卷号: 92, 期号: 4, 页码: art. no. 042906
Zhang, PF; Liu, XL; Zhang, RQ; Fan, HB; Song, HP; Wei, HY; Jiao, CM; Yang, SY; Zhu, QS; Wang, ZG
收藏  |  浏览/下载：41/2  |  提交时间：2010/03/08
INN  ALN  GAN  
Interface of wet oxidized AlGaAs/GaAs distributed Bragg reflectors 期刊论文
applied physics a-materials science & processing, 2007, 卷号: 86, 期号: 1, 页码: 19-22
Li RY (Li R. Y.); Wang ZG (Wang Z. G.); Xu B (Xu B.); Jin P (Jin P.); Guo X (Guo X.); Chen M (Chen M.)
收藏  |  浏览/下载：59/0  |  提交时间：2010/04/11
The effect of AlN growth time on the electrical properties of Al0.38Ga0.62N/AlN/GaN HEMT structures 期刊论文
journal of crystal growth, 2006, 卷号: 289, 期号: 2, 页码: 415-418
Wang CM; Wang XL; Hu GX; Wang JX; Xiao HL; Li JP
收藏  |  浏览/下载：44/0  |  提交时间：2010/04/11
Growth and characterization of 0.8-mu m gate length AlGaN/GaN HEMTs on sapphire substrates 期刊论文
science in china series f-information sciences, 2005, 卷号: 48, 期号: 6, 页码: 808-814
Wang XL; Wang CM; Hu GX; Wang JX; Ran JX; Fang CB; Li JP; Zeng YP; Li JM; Liu XY; Liu J; Qian H
收藏  |  浏览/下载：326/7  |  提交时间：2010/04/11
Effects of different modified underlayer surfaces on growth and optical properties of InGaN quantum dots 期刊论文
vacuum, 2005, 卷号: 77, 期号: 3, 页码: 307-314
Han, XX; Li, JM; Wu, JJ; Wang, XH; Li, DB; Liu, XL; Han, PD; Zhu, QS; Wang, ZG
收藏  |  浏览/下载：28/0  |  提交时间：2010/03/17
Luminescence properties of multi-layer InGaN quantum dots grown on C- and R-plane sapphire substrates 期刊论文
physica e-low-dimensional systems & nanostructures, 2005, 卷号: 27, 期号: 3, 页码: 314-318
Chen, Z; Chua, SJ; Han, PD; Liu, XL; Lu, DC; Zhu, QS; Wang, ZG; Tripathy, S
收藏  |  浏览/下载：37/0  |  提交时间：2010/03/17
GaN  
Structural and optical properties of 3D growth multilayer InGaN/GaN quantum dots by metalorganic chemical vapor deposition 期刊论文
journal of crystal growth, 2004, 卷号: 266, 期号: 4, 页码: 423-428
作者:  Li DB;  Han XX;  Han PD
收藏  |  浏览/下载：161/51  |  提交时间：2010/03/09
Structure characteristics of InGaN quantum dots fabricated by passivation and low temperature method 期刊论文
journal of crystal growth, 2003, 卷号: 252, 期号: 1-3, 页码: 19-25
Qu BZ; Chen Z; Lu DC; Han P; Liu XG; Wang XH; Wang D; Zhu QS; Wang ZG
收藏  |  浏览/下载：37/0  |  提交时间：2010/08/12
Electronic properties of sulfur passivated undoped-n(+) type GaAs surface studied by photoreflectance 期刊论文
applied surface science, 2003, 卷号: 218, 期号: 1-4, 页码: 210-214
作者:  Jin P
收藏  |  浏览/下载：459/3  |  提交时间：2010/08/12

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